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NP3100SET3G

Onsemi

NP3100SET3G by Onsemi

NP3100SET3G by Onsemi is a Silicon Surge Protector with THYRISTOR technology. It has a max operating temp of 150 °C, min operating temp of -40°C, and max breakdown voltage of 375V. Ideal for surface mount applications in protecting electronic devices from power surges.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,317 parts In-Stock

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Vyrian

USA . 2,245 parts In-Stock

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2,245

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

SupplyDigital Components

Austria . 7,905 parts In-Stock

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7,905

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TANS Electronics

Latvia . 7,201 parts In-Stock

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7,201

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Kulean Microsystems

USA . 4,742 parts In-Stock

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4,742

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Corphita

USA . 2,271 parts In-Stock

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Problanco Electronics

Mexico . 924 parts In-Stock

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UHIMA Technologies

Türkiye . 481 parts In-Stock

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481

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Corohmni

South Africa . 170 parts In-Stock

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Overview

Enhance the protection of your electronic devices with the NP3100SET3G by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers top-quality silicon surge protectors that guarantee reliability and durability. Ideal for various applications, this surge protector offers peace of mind by safeguarding your equipment from voltage spikes. With easy surface mount installation and impressive specifications, such as a maximum breakdown voltage of 375V, the NP3100SET3G provides exceptional value and protection for your valuable electronics. Trust Onsemi to keep your devices safe and secure.

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for easy and convenient installation on circuit boards, making this surge protector suitable for various electronic devices.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this surge protector can withstand heat and operate efficiently even in demanding environments.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

Thyristor surge protectors are known for their quick response and ability to clamp down on excessive voltage, providing reliable protection for connected equipment.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures that this surge protector remains effective even in cold conditions, making it versatile for various settings.

Maximum Holding Current: 150 mA

With a high maximum holding current, this surge protector can handle surges effectively without compromising on performance, ensuring continuous protection.

Maximum Breakdown Voltage: 375 V

The high maximum breakdown voltage allows this surge protector to dissipate high levels of excess voltage, ensuring the safety of connected devices and equipment.

Technical Specifications

Silicon Surge Protectors NP3100SET3G attributes and parameters. Explore more Silicon Surge Protectors devices from Onsemi

Specs

Maximum Breakdown Voltage:

375 V

Maximum Holding Current:

150 mA

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Sub-Category:

Silicon Surge Protectors

Surface Mount:

YES

Trigger Device Type:

Trade Compliance

NP3100SET3G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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