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TISP4360H4BJR

Texas Instruments

TISP4360H4BJR by Texas Instruments

TISP4360H4BJR by Texas Instruments is a single silicon surge protector with 60A non-repetitive peak on-state current. It features a plastic/epoxy package body, surface mount capability, and a max breakdown voltage of 360V. Ideal for protecting electronic circuits from voltage surges in various applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,104 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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7,104

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-

-

-

Digiode

USA . 3,238 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,238

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-

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,654 parts In-Stock

1+ parts

$3.395

100+ parts

-

1k+ parts

$3.922

10k+ parts

-

1,654

$3.395

-

$3.922

-

DigiPath Technology Company

USA . 463 parts In-Stock

1+ parts

$3.739

100+ parts

$3.440

1k+ parts

-

10k+ parts

-

463

$3.739

$3.440

-

-

IDEA Electronic Components Group

UK . 672 parts In-Stock

1+ parts

$3.815

100+ parts

-

1k+ parts

$3.434

10k+ parts

-

672

$3.815

-

$3.434

-

ChromeModa Solutions

Germany . 268 parts In-Stock

1+ parts

$3.815

100+ parts

$3.128

1k+ parts

-

10k+ parts

-

268

$3.815

$3.128

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-

AZTECH Wire

Italy . 854 parts In-Stock

1+ parts

$6.094

100+ parts

-

1k+ parts

-

10k+ parts

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854

$6.094

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-

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One Stop Electronics

USA . 341 parts In-Stock

1+ parts

$21.100

100+ parts

-

1k+ parts

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10k+ parts

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341

$21.100

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-

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Corphita

USA . 1,673 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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1,673

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Overview

Protect your valuable electronic devices with the TISP4360H4BJR by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality silicon surge protectors that are essential for safeguarding against power surges and voltage spikes. This single configuration device offers a non-repetitive peak on-state current of 60A, ensuring reliable protection for your equipment. With its compact design and C bend terminal form, this thyristor surge protector is easy to install and ideal for a wide range of applications. Trust Texas Instruments to provide you with the protection and peace of mind you need.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the surge protector, ensuring long-term performance and reliability.

Configuration: SINGLE

Single configuration makes it easy to install and use, eliminating any complexity in setup.

Non Repetitive Peak On-state Current: 60 A

High peak on-state current capacity ensures that the surge protector can handle surges effectively, providing excellent protection for connected devices.

Surface Mount: YES

Surface mount capability allows for convenient and flexible installation options in various locations.

Package Shape: RECTANGULAR

Rectangular shape offers a compact and space-saving design, making it suitable for installations where space is limited.

Terminal Form: C BEND

C bend terminal form facilitates easy and secure connections, ensuring stable performance of the surge protector.

No. of Terminals: 2

Having 2 terminals simplifies the wiring process and contributes to the overall simplicity of installation.

Package Style (Meter): SMALL OUTLINE

Small outline package style makes the surge protector visually unobtrusive and easy to integrate into different setups.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

Thyristor surge protector type is known for its fast response time and high surge handling capacity, ensuring effective protection for connected equipment.

Terminal Position: DUAL

Dual terminal position provides added flexibility and convenience in terms of wiring configurations, making it suitable for various installation scenarios.

Maximum Breakdown Voltage: 360 V

High breakdown voltage rating ensures reliable protection against high-voltage surges, safeguarding connected devices effectively.

Technical Specifications

Silicon Surge Protectors TISP4360H4BJR attributes and parameters. Explore more Silicon Surge Protectors devices from Texas Instruments

Specs

Maximum Breakdown Voltage:

360 V

Configuration:

JESD-30 Code:

R-PDSO-C2

Non Repetitive Peak On-state Current:

60 A

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

C BEND

Terminal Position:

Trigger Device Type:

Trade Compliance

TISP4360H4BJR Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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