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TISP4250H3BJR

Texas Instruments

TISP4250H3BJR by Texas Instruments

TISP4250H3BJR by Texas Instruments is a single silicon surge protector with 60A non-repetitive peak on-state current. It has a max breakdown voltage of 250V and operates b/w -40°C to 150°C. Ideal for protecting electronic devices from power surges in various applications.

Median Price

$1.108

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Electronics Inc.

Canada . 322 parts In-Stock

1+ parts

$1.730

100+ parts

$1.300

1k+ parts

$1.130

10k+ parts

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322

$1.730

$1.300

$1.130

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Cyclops Electronics Ltd

UK . 5,770 parts In-Stock

1+ parts

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5,770

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Vyrian

USA . 5,407 parts In-Stock

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5,407

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Digiode

USA . 4,508 parts In-Stock

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4,508

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 3,700 parts In-Stock

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3,700

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Bristol Electronics

USA . 480 parts In-Stock

1+ parts

-

100+ parts

$0.487

1k+ parts

$0.240

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480

-

$0.487

$0.240

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R&J Components

USA . 134 parts In-Stock

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134

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,934 parts In-Stock

1+ parts

$2.088

100+ parts

-

1k+ parts

$2.606

10k+ parts

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1,934

$2.088

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$2.606

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ChromeModa Solutions

Germany . 4,215 parts In-Stock

1+ parts

$2.346

100+ parts

$1.924

1k+ parts

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4,215

$2.346

$1.924

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IDEA Electronic Components Group

UK . 316 parts In-Stock

1+ parts

$2.346

100+ parts

-

1k+ parts

$2.111

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316

$2.346

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$2.111

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AZTECH Wire

Italy . 506 parts In-Stock

1+ parts

$19.491

100+ parts

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506

$19.491

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One Stop Electronics

USA . 1,528 parts In-Stock

1+ parts

$20.100

100+ parts

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1,528

$20.100

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Kepictronics

USA . 5,940 parts In-Stock

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5,940

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Corphita

USA . 3,352 parts In-Stock

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3,352

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DigiPath Technology Company

USA . 1,188 parts In-Stock

1+ parts

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100+ parts

$2.115

1k+ parts

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1,188

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$2.115

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Perfect Parts

USA . 168 parts In-Stock

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168

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Overview

Protect your valuable electronic equipment with the TISP4250H3BJR by Texas Instruments, a high-quality Silicon Surge Protector designed to safeguard against power surges. With Texas Instruments' reputation for excellence in manufacturing, you can trust that this device will provide reliable protection for your devices. Ideal for a wide range of applications, this surge protector offers peace of mind and security for your electronics. Invest in the TISP4250H3BJR today and ensure the longevity of your devices.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and protection against environmental factors, ensuring a longer lifespan for the surge protector.

Configuration: SINGLE

Single configuration allows for easy installation and integration into existing systems without the need for additional components.

Non Repetitive Peak On-state Current: 60 A

High peak on-state current capability ensures reliable protection against sudden surges, making it suitable for sensitive electronic equipment.

Surface Mount: YES

Surface mount capability enables easy and efficient installation on circuit boards, saving space and reducing assembly time.

Package Shape: RECTANGULAR

Rectangular shape allows for compact and space-saving design, making it suitable for various applications with limited space.

Terminal Form: C BEND

C bend terminal form provides secure connection and stability, ensuring reliable performance in demanding conditions.

No. of Terminals: 2

With two terminals, this surge protector offers simple and straightforward connectivity, making it easy to install and use.

Package Style (Meter): SMALL OUTLINE

Small outline package style allows for a low-profile design, ideal for applications where space is limited.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures reliable performance in various environmental conditions, making it suitable for a wide range of applications.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

Thyristor surge protector offers fast response time and effective protection against sudden voltage spikes, safeguarding connected equipment.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for reliable performance in cold environments, making it suitable for outdoor or industrial applications.

Terminal Position: DUAL

Dual terminal position provides flexibility in installation and connectivity options, allowing for versatile use in different systems.

Maximum Holding Current: 600 mA

High maximum holding current ensures continuous protection against transient surges, prolonging the life of connected equipment.

Maximum Breakdown Voltage: 250 V

High maximum breakdown voltage offers reliable protection against voltage spikes, ensuring the safety of connected devices.

Reference Standard: UL RECOGNIZED

Being UL recognized ensures compliance with safety standards and regulations, providing assurance of quality and reliability.

Technical Specifications

Silicon Surge Protectors TISP4250H3BJR attributes and parameters. Explore more Silicon Surge Protectors devices from Texas Instruments

Specs

Maximum Breakdown Voltage:

250 V

Configuration:

Maximum Holding Current:

600 mA

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

Non Repetitive Peak On-state Current:

60 A

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Silicon Surge Protectors

Surface Mount:

YES

Terminal Form:

C BEND

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TISP4250H3BJR Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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