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TISP7290F3DR

Texas Instruments

TISP7290F3DR by Texas Instruments

TISP7290F3DR by Texas Instruments is a 3-element surge protector with 4.3A peak current, 220V DC voltage, and 290V breakdown voltage. It is a thyristor surge protector in a small outline package for surge protection applications. Operates b/w 0-70°C temperature range and UL recognized for reliability.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,768 parts In-Stock

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Bristol Electronics

USA . 2,400 parts In-Stock

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2,400

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Digiode

USA . 1,752 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 647 parts In-Stock

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Dan-Mar Components

USA . 647 parts In-Stock

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647

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One Stop Electronics

USA . 671 parts In-Stock

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$2.100

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671

$2.100

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Parana Technologies

USA . 650 parts In-Stock

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$2.239

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$2.743

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650

$2.239

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$2.743

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DigiPath Technology Company

USA . 43 parts In-Stock

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$2.466

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43

$2.466

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ChromeModa Solutions

Germany . 2,928 parts In-Stock

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$2.516

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$2.063

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IDEA Electronic Components Group

UK . 1,499 parts In-Stock

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$2.516

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$2.264

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AZTECH Wire

Italy . 560 parts In-Stock

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$6.165

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Corphita

USA . 4,360 parts In-Stock

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Infinite Electronics LLP (Excess)

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Overview

Looking for reliable surge protection for your electronic devices? Look no further than the TISP7290F3DR by Texas Instruments. With a reputation for high-quality products, Texas Instruments delivers peace of mind with this silicon surge protector. Whether you're safeguarding your home theater system or industrial equipment, this device offers unmatched protection against power surges. Trust Texas Instruments to keep your valuable electronics safe and enjoy uninterrupted performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the surge protector, ensuring a longer lifespan.

Configuration: DELTA CONNECTED, 3 ELEMENTS

The delta connected configuration with 3 elements enhances the efficiency and performance of the surge protector.

Non Repetitive Peak On-state Current: 4.3 A

With a high non-repetitive peak on-state current, this surge protector can effectively handle sudden high voltage spikes.

Surface Mount: YES

Allows for easy installation on circuit boards, saving time and effort during assembly.

Package Shape: RECTANGULAR

The rectangular shape provides a compact design, making it easier to fit in various electronic devices.

Maximum Operating Temperature: 70 °C

Can operate efficiently at high temperatures, ensuring reliability in different environmental conditions.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

Utilizes advanced thyristor technology for effective surge protection, safeguarding connected devices.

Maximum Breakdown Voltage: 290 V

With a high maximum breakdown voltage, this surge protector can handle a wide range of voltage spikes, offering comprehensive protection.

Technical Specifications

Silicon Surge Protectors TISP7290F3DR attributes and parameters. Explore more Silicon Surge Protectors devices from Texas Instruments

Specs

Maximum Breakdown Voltage:

290 V

Maximum DC Off-state Voltage:

220 V

JEDEC-95 Code:

MS-012AA

JESD-30 Code:

R-PDSO-G8

Non Repetitive Peak On-state Current:

4.3 A

No. of Elements:

3

No. of Terminals:

8

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Silicon Surge Protectors

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TISP7290F3DR Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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