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TISP4200H3BJ

Texas Instruments

TISP4200H3BJ by Texas Instruments

TISP4200H3BJ by Texas Instruments is a single silicon surge protector with 60A peak current, 155V DC voltage, and 150°C max temp. Ideal for protecting circuits from surges in applications like telecommunications equipment due to its thyristor surge protection design.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,740 parts In-Stock

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Bristol Electronics

USA . 4,739 parts In-Stock

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Digiode

USA . 3,135 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 290 parts In-Stock

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290

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ComSIT Distribution GmbH

Germany . 100 parts In-Stock

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100

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Distributors (Availability)

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Parana Technologies

USA . 1,884 parts In-Stock

1+ parts

$2.384

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$2.882

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1,884

$2.384

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DigiPath Technology Company

USA . 533 parts In-Stock

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$2.625

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533

$2.625

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ChromeModa Solutions

Germany . 6,832 parts In-Stock

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$2.679

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$2.197

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$2.679

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IDEA Electronic Components Group

UK . 2,203 parts In-Stock

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$2.679

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$2.411

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AZTECH Wire

Italy . 353 parts In-Stock

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$14.614

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One Stop Electronics

USA . 1,553 parts In-Stock

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$24.100

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Corphita

USA . 1,718 parts In-Stock

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Overview

Protect your valuable electronics with the TISP4200H3BJ by Texas Instruments, a top-of-the-line silicon surge protector that offers unparalleled quality and reliability. Designed for single configuration applications, this compact rectangular device features a C bend terminal form for easy installation. With a maximum DC off-state voltage of 155V and a non-repetitive peak on-state current of 60A, this thyristor surge protector ensures optimal protection against power surges. Trust Texas Instruments to deliver cutting-edge technology that safeguards your devices with unmatched precision and efficiency. Upgrade to the TISP4200H3BJ today and experience peace of mind knowing your electronics are safe.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and resistance to environmental factors, making the surge protector reliable in varying conditions.

Configuration: SINGLE

The single configuration simplifies installation and makes the surge protector easy to use for protecting electronic devices.

Non Repetitive Peak On-state Current: 60 A

The high peak current capacity of 60 A allows the surge protector to handle sudden and high energy surges effectively, protecting connected devices from damage.

Surface Mount: YES

The surface mount capability enables easy and secure mounting of the surge protector on circuit boards or devices, ensuring a compact and efficient design.

Package Shape: RECTANGULAR

The rectangular shape enables space-efficient placement of the surge protector in electronic devices or equipment, optimizing the use of available space.

Terminal Form: C BEND

The C bend terminal form simplifies the connection process and ensures a secure and reliable electrical connection, contributing to the overall performance of the surge protector.

Maximum DC Off-state Voltage: 155 V

The maximum off-state voltage capacity of 155 V provides effective protection against voltage spikes, ensuring the safety of connected devices.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows the surge protector to function efficiently in elevated temperature environments without compromising performance.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

The use of a thyristor surge protector enhances the reliability and responsiveness of the surge protector in detecting and suppressing surge events effectively.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C ensures the surge protector can function reliably in cold environments, making it suitable for use in various temperature conditions.

Maximum Holding Current: 600 mA

The high holding current capacity of 600 mA allows the surge protector to remain in a protective state for an extended period, enhancing the overall safety of connected devices.

Maximum Breakdown Voltage: 200 V

The high maximum breakdown voltage of 200 V ensures effective protection against voltage spikes and surges, safeguarding electronic devices from damage or malfunction.

Technical Specifications

Silicon Surge Protectors TISP4200H3BJ attributes and parameters. Explore more Silicon Surge Protectors devices from Texas Instruments

Specs

Maximum Breakdown Voltage:

200 V

Configuration:

Maximum DC Off-state Voltage:

155 V

Maximum Holding Current:

600 mA

JESD-30 Code:

R-PDSO-C2

Non Repetitive Peak On-state Current:

60 A

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Sub-Category:

Silicon Surge Protectors

Surface Mount:

YES

Terminal Form:

C BEND

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TISP4200H3BJ Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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