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TISP2380F3P

Texas Instruments

TISP2380F3P by Texas Instruments

TISP2380F3P by Texas Instruments is a silicon surge protector with 3 elements in a delta configuration. It has a max breakdown voltage of 380V and can handle a non-repetitive peak on-state current of 6A. This device, recognized by UL, is ideal for protecting electronic equipment from voltage surges.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,918 parts In-Stock

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Digiode

USA . 1,675 parts In-Stock

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1,675

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Distributors (Availability)

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Ampacity Inc.

Singapore . 213 parts In-Stock

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$2.100

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213

$2.100

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Parana Technologies

USA . 302 parts In-Stock

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$4.116

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$4.570

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302

$4.116

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$4.570

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ChromeModa Solutions

Germany . 5,623 parts In-Stock

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$4.625

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$3.792

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5,623

$4.625

$3.792

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IDEA Electronic Components Group

UK . 249 parts In-Stock

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$4.625

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$4.162

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249

$4.625

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$4.162

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Semicontronic

India . 1,491 parts In-Stock

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$7.100

100+ parts

$6.922

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$6.887

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1,491

$7.100

$6.922

$6.887

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AZTECH Wire

Italy . 828 parts In-Stock

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$15.772

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828

$15.772

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One Stop Electronics

USA . 603 parts In-Stock

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$18.100

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603

$18.100

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DigiPath Technology Company

USA . 2,040 parts In-Stock

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$4.170

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$4.170

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Corphita

USA . 547 parts In-Stock

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Corohmni

South Africa . 456 parts In-Stock

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Overview

Protect your valuable electronic equipment with the reliable TISP2380F3P by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality silicon surge protectors that offer unmatched protection against voltage spikes and surges. Ideal for a wide range of applications, this surge protector is designed with three elements in a delta connected configuration for maximum efficiency. With its UL Recognized reference standard and 380V maximum breakdown voltage, you can trust that your devices are safe from harmful electrical disturbances. Invest in peace of mind with the TISP2380F3P and safeguard your electronics today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body provides durability and protection against environmental factors, making it a reliable choice for surge protection.

Configuration: DELTA CONNECTED, 3 ELEMENTS

The delta connected configuration with 3 elements enhances the efficiency and effectiveness of surge protection by distributing the load evenly and providing multiple layers of protection.

Non Repetitive Peak On-state Current: 6 A

With a non repetitive peak on-state current of 6A, this surge protector can handle sudden high currents effectively, ensuring the safety of connected devices.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy installation and placement in various electrical setups, making it convenient for use in different applications.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides secure connections and ensures stability in the circuit, reducing the risk of loose connections or disconnections during operation.

Maximum Breakdown Voltage: 380 V

With a maximum breakdown voltage of 380V, this surge protector can effectively handle high voltage surges, protecting connected equipment from damage due to overvoltage.

Technical Specifications

Silicon Surge Protectors TISP2380F3P attributes and parameters. Explore more Silicon Surge Protectors devices from Texas Instruments

Specs

Maximum Breakdown Voltage:

380 V

Maximum DC Off-state Voltage:

270 V

JESD-30 Code:

R-PDIP-T8

Non Repetitive Peak On-state Current:

6 A

No. of Elements:

3

No. of Terminals:

8

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TISP2380F3P Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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