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TISP2290L

Texas Instruments

TISP2290L by Texas Instruments

TISP2290L by Texas Instruments is a silicon surge protector with 3 elements in delta configuration. It has a max breakdown voltage of 290V and can handle non-repetitive peak on-state current of 10A. This device, with through-hole terminals, is ideal for protecting electronic circuits from voltage surges.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,130 parts In-Stock

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8,130

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Digiode

USA . 1,714 parts In-Stock

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1,714

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Sternenhof Electronics

Switzerland . 906 parts In-Stock

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906

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Fibra_Brandt Electronic GMBH

Germany . 64 parts In-Stock

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64

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Distributors (Availability)

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Parana Technologies

USA . 1,847 parts In-Stock

1+ parts

$3.049

100+ parts

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$3.562

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1,847

$3.049

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$3.562

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DigiPath Technology Company

USA . 1,674 parts In-Stock

1+ parts

$3.357

100+ parts

$3.089

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1,674

$3.357

$3.089

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ChromeModa Solutions

Germany . 3,526 parts In-Stock

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$3.426

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$2.809

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3,526

$3.426

$2.809

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IDEA Electronic Components Group

UK . 240 parts In-Stock

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$3.426

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$3.083

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240

$3.426

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$3.083

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AZTECH Wire

Italy . 683 parts In-Stock

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$8.732

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683

$8.732

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One Stop Electronics

USA . 816 parts In-Stock

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$28.100

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816

$28.100

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Kepictronics

USA . 15,000 parts In-Stock

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Corphita

USA . 827 parts In-Stock

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Overview

Enhance the protection of your electronic devices with the TISP2290L by Texas Instruments. Manufactured with top-notch quality and expertise, this silicon surge protector offers reliable safeguarding against voltage spikes and surges. Ideal for a wide range of applications, this product provides peace of mind for both personal and professional use. Trust in the value and benefits that Texas Instruments brings to the table with the TISP2290L, ensuring the longevity and performance of your valuable electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection against external elements, making the surge protector suitable for various environments.

Configuration: DELTA CONNECTED, 3 ELEMENTS

The delta-connected configuration with 3 elements provides efficient surge protection and helps to evenly distribute the load, enhancing the overall performance and reliability of the device.

Non Repetitive Peak On-state Current: 10 A

The high peak on-state current rating of 10A ensures that the surge protector can handle sudden spikes in electrical current, offering effective protection for connected devices.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy installation and integration into various electronic systems, offering flexibility in design and placement.

Terminal Form: THROUGH-HOLE

The through-hole terminal form ensures secure connections and easy soldering, making installation straightforward and reliable.

No. of Elements: 3

Having 3 elements provides multiple layers of protection against surges, ensuring enhanced safety for connected equipment.

No. of Terminals: 3

The 3 terminals offer straightforward connectivity and installation, simplifying the setup process for users.

Package Style (Meter): IN-LINE

The in-line package style allows for convenient integration into existing wiring systems without requiring significant modifications, making it ideal for retrofit applications.

Trigger Device Type: SILICON SURGE PROTECTOR

The use of silicon surge protector as the trigger device ensures fast response times and reliable surge protection, safeguarding connected devices from potential damage.

Terminal Position: SINGLE

The single terminal position simplifies installation and ensures a straightforward connection process, enhancing user convenience.

Maximum Breakdown Voltage: 290 V

With a high maximum breakdown voltage of 290V, the surge protector can effectively suppress surges and transient overvoltages, providing reliable protection for sensitive electronics.

Technical Specifications

Silicon Surge Protectors TISP2290L attributes and parameters. Explore more Silicon Surge Protectors devices from Texas Instruments

Specs

Maximum Breakdown Voltage:

290 V

JESD-30 Code:

R-PSIP-T3

Non Repetitive Peak On-state Current:

10 A

No. of Elements:

3

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TISP2290L Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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