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NP1800SCMCT3G

Onsemi

NP1800SCMCT3G by Onsemi

NP1800SCMCT3G by Onsemi is a single silicon surge protector with a max DC off-state voltage of 170V and trigger device type as thyristor. It has a small outline package style, operates b/w -55 to 150 °C, and is ideal for UL recognized applications requiring protection against surges.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,175 parts In-Stock

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3,175

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Digiode

USA . 610 parts In-Stock

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610

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Distributors (Availability)

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AZTECH Wire

Italy . 548 parts In-Stock

1+ parts

$18.660

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548

$18.660

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SupplyDigital Components

Austria . 8,336 parts In-Stock

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8,336

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Kulean Microsystems

USA . 7,229 parts In-Stock

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7,229

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TANS Electronics

Latvia . 5,925 parts In-Stock

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5,925

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Corphita

USA . 1,001 parts In-Stock

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1,001

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UHIMA Technologies

Türkiye . 351 parts In-Stock

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351

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Corohmni

South Africa . 340 parts In-Stock

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340

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Problanco Electronics

Mexico . 210 parts In-Stock

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Overview

Unleash the power of reliable surge protection with the NP1800SCMCT3G by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers top-quality silicon surge protectors that guarantee peace of mind for your valuable electronics. Whether you're safeguarding sensitive equipment at home or in a commercial setting, this single configuration device offers superior protection against voltage spikes. Say goodbye to worries about electrical damage and hello to uninterrupted performance. Invest in the NP1800SCMCT3G today and experience the ultimate in surge protection technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durable and reliable protection for the internal components of the surge protector.

Configuration: SINGLE

Simplifies installation and operation by having a single configuration.

Surface Mount: YES

Enables easy and convenient mounting on circuit boards.

Package Shape: RECTANGULAR

Allows for efficient use of space on circuit boards.

Terminal Form: C BEND

Facilitates secure and stable connections for the surge protector.

Maximum DC Off-state Voltage: 170 V

Provides protection against high levels of voltage when not in use.

Maximum Operating Temperature: 150 °C

Ensures reliable performance even in high temperature environments.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

Utilizes advanced technology for effective surge protection.

Minimum Operating Temperature: -55 °C

Ensures the surge protector can operate in extremely low temperature conditions.

Terminal Finish: TIN

Provides corrosion resistance and reliable electrical connections.

Terminal Position: DUAL

Allows for versatile installation options.

Maximum Breakdown Voltage: 220 V

Provides protection against voltage spikes above this threshold.

Peak Reflow Temperature: 260 °C

Designed to withstand high reflow temperatures during manufacturing processes.

Reference Standard: UL RECOGNIZED

Meets industry standards for safety and performance.

Technical Specifications

Silicon Surge Protectors NP1800SCMCT3G attributes and parameters. Explore more Silicon Surge Protectors devices from Onsemi

Specs

Maximum Breakdown Voltage:

220 V

Configuration:

Maximum DC Off-state Voltage:

170 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

C BEND

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Device Type:

Trade Compliance

NP1800SCMCT3G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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