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NP1800SAMCT3G

Onsemi

NP1800SAMCT3G by Onsemi

NP1800SAMCT3G by Onsemi is a single silicon surge protector with 20A non-repetitive peak on-state current. It has a max breakdown voltage of 220V and operates b/w -55 to 150 °C. Ideal for protecting electronic devices from voltage surges in various applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,484 parts In-Stock

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1,484

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Digiode

USA . 468 parts In-Stock

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468

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Problanco Electronics

Mexico . 8,021 parts In-Stock

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8,021

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SupplyDigital Components

Austria . 5,060 parts In-Stock

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5,060

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Kulean Microsystems

USA . 1,686 parts In-Stock

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1,686

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Corphita

USA . 1,120 parts In-Stock

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1,120

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UHIMA Technologies

Türkiye . 220 parts In-Stock

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220

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TANS Electronics

Latvia . 129 parts In-Stock

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Corohmni

South Africa . 102 parts In-Stock

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Overview

Protect your electronics with the NP1800SAMCT3G from Onsemi, a leading manufacturer of high-quality Silicon Surge Protectors. This single configuration device offers reliable protection against power surges, making it ideal for a wide range of applications. With a maximum breakdown voltage of 220V and UL recognition, this compact and durable surge protector ensures peace of mind for your valuable equipment. Invest in the NP1800SAMCT3G today and safeguard your devices from damaging electrical spikes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the surge protector.

Configuration: SINGLE

Simplified design for easy installation and use in various applications.

Non Repetitive Peak On-state Current: 20 A

Capable of handling high current surges to protect connected devices effectively.

Surface Mount: YES

Easy to mount on circuit boards, saving space and facilitating assembly processes.

Package Shape: RECTANGULAR

Compact design for efficient placement in electronic devices.

Terminal Form: C BEND

Facilitates secure and reliable connections within the circuit.

Maximum DC Off-state Voltage: 170 V

Suitable for protecting devices from voltage spikes up to 170 volts, ensuring safety of connected equipment.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for a variety of environments.

Minimum Operating Temperature: -55 °C

Capable of operating in extremely low temperatures, increasing its versatility.

Terminal Finish: TIN

Provides corrosion resistance, ensuring long-term reliability of the terminal connections.

Maximum Breakdown Voltage: 220 V

Offers extra protection by breaking down at voltage levels beyond 220 volts, safeguarding connected devices.

Peak Reflow Temperature: 260 °C

Capable of withstanding high temperatures during soldering processes, ensuring product integrity.

Technical Specifications

Silicon Surge Protectors NP1800SAMCT3G attributes and parameters. Explore more Silicon Surge Protectors devices from Onsemi

Specs

Maximum Breakdown Voltage:

220 V

Configuration:

Maximum DC Off-state Voltage:

170 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Non Repetitive Peak On-state Current:

20 A

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

C BEND

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Device Type:

Trade Compliance

NP1800SAMCT3G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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