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TISP4115H3LMFR

Texas Instruments

TISP4115H3LMFR by Texas Instruments

TISP4115H3LMFR by Texas Instruments is a single silicon surge protector with a non-repetitive peak on-state current of 60A. It operates b/w -40°C to 150°C, offering protection up to 115V breakdown voltage. Ideal for applications requiring reliable surge protection in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,570 parts In-Stock

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4,570

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Digiode

USA . 1,853 parts In-Stock

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1,853

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Distributors (Availability)

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One Stop Electronics

USA . 1,292 parts In-Stock

1+ parts

$0.100

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1,292

$0.100

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Parana Technologies

USA . 1,344 parts In-Stock

1+ parts

$4.389

100+ parts

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$4.806

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1,344

$4.389

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$4.806

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DigiPath Technology Company

USA . 1,938 parts In-Stock

1+ parts

$4.833

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1,938

$4.833

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ChromeModa Solutions

Germany . 4,219 parts In-Stock

1+ parts

$4.932

100+ parts

$4.044

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4,219

$4.932

$4.044

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IDEA Electronic Components Group

UK . 902 parts In-Stock

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$4.932

100+ parts

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$4.439

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902

$4.932

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$4.439

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AZTECH Wire

Italy . 832 parts In-Stock

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$15.288

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832

$15.288

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Semicontronic

India . 1,626 parts In-Stock

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$19.100

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$18.622

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$18.527

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1,626

$19.100

$18.622

$18.527

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Ampacity Inc.

Singapore . 750 parts In-Stock

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$28.100

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750

$28.100

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Corphita

USA . 3,370 parts In-Stock

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3,370

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Corohmni

South Africa . 80 parts In-Stock

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Overview

Enhance the protection of your electronic devices with the TISP4115H3LMFR by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments ensures top-quality products that provide reliable surge protection. This silicon surge protector is designed for single configuration applications, offering a non-repetitive peak on-state current of 60A and a maximum DC off-state voltage of 90V. With a trigger device type of thyristor surge protector, this product guarantees optimal performance even in extreme conditions. Invest in the TISP4115H3LMFR to safeguard your equipment and enjoy peace of mind knowing your devices are protected from unexpected power surges.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides durability and resistance to harsh environmental conditions, making this surge protector a reliable choice for long-term use.

Configuration: SINGLE

The single configuration simplifies installation and maintenance of the surge protector, ensuring straightforward setup for users.

Non Repetitive Peak On-state Current: 60 A

The high non-repetitive peak on-state current rating of 60A allows the surge protector to effectively handle sudden spikes in current, providing robust protection for connected devices.

Package Shape: ROUND

The round package shape facilitates easy mounting and integration into various systems and equipment, enhancing the versatility of this surge protector.

Terminal Form: THROUGH-HOLE

The through-hole terminal form ensures secure connections and ease of soldering during installation, promoting reliable electrical connections for optimal surge protection.

No. of Terminals: 2

Having two terminals simplifies the wiring process and ensures proper connection of the surge protector within the circuit, enhancing the overall efficiency of the protection system.

Package Style (Meter): CYLINDRICAL

The cylindrical package style makes the surge protector compact and easy to handle, offering space-saving benefits and simplifying installation in tight spaces.

Maximum DC Off-state Voltage: 90 V

The high maximum DC off-state voltage rating of 90V provides effective protection against voltage surges, safeguarding connected equipment from potential damage.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures the surge protector can withstand elevated temperatures, making it suitable for a wide range of operating environments.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

The thyristor surge protector offers fast response times and high surge handling capabilities, providing reliable protection against transient voltage spikes and surges.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C allows the surge protector to function effectively in harsh cold climates, ensuring optimal performance in various environmental conditions.

Terminal Position: BOTTOM

The bottom terminal position allows for easy and secure mounting of the surge protector, ensuring stable connections and reliable performance in demanding applications.

Maximum Holding Current: 600 mA

The high maximum holding current rating of 600mA enables the surge protector to maintain protection levels for extended periods, offering continuous safeguarding against voltage surges.

Maximum Breakdown Voltage: 115 V

The high maximum breakdown voltage rating of 115V ensures the surge protector can handle high voltage levels without failing, providing reliable overvoltage protection for connected devices.

Technical Specifications

Silicon Surge Protectors TISP4115H3LMFR attributes and parameters. Explore more Silicon Surge Protectors devices from Texas Instruments

Specs

Maximum Breakdown Voltage:

115 V

Configuration:

Maximum DC Off-state Voltage:

90 V

Maximum Holding Current:

600 mA

JESD-30 Code:

O-PBCY-T2

Non Repetitive Peak On-state Current:

60 A

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Sub-Category:

Silicon Surge Protectors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TISP4115H3LMFR Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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