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NTVB300SB-L

Onsemi

NTVB300SB-L by Onsemi

NTVB300SB-L by Onsemi is a single silicon surge protector with a max breakdown voltage of 400V. It has a trigger device type and operates b/w -40 °C to 150°C. Ideal for surface mount applications in protecting electronic devices from voltage surges.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,506 parts In-Stock

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Vyrian

USA . 1,177 parts In-Stock

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Kepictronics

USA . 30,000 parts In-Stock

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Kulean Microsystems

USA . 6,516 parts In-Stock

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Problanco Electronics

Mexico . 4,939 parts In-Stock

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TANS Electronics

Latvia . 4,812 parts In-Stock

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SupplyDigital Components

Austria . 2,639 parts In-Stock

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Corphita

USA . 595 parts In-Stock

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UHIMA Technologies

Türkiye . 485 parts In-Stock

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Corohmni

South Africa . 444 parts In-Stock

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Overview

Protect your electronic devices with the reliable NTVB300SB-L silicon surge protector from Onsemi. Designed for high-quality performance and durability, this single configuration device is perfect for a variety of applications. With its small outline package style and dual terminal position, it offers convenient installation and use. Ensure your valuable equipment stays safe from unexpected power surges with the Onsemi NTVB300SB-L. Trust in the expertise of Onsemi to provide you with the protection you need.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides excellent insulation and protection for the internal components of the surge protector.

Configuration: SINGLE

Simplifies installation and maintenance of the surge protector.

Surface Mount: YES

Easy and efficient integration into circuit boards.

Package Shape: RECTANGULAR

Optimal design for space-saving and streamlined installation.

Terminal Form: C BEND

Facilitates secure and reliable connection to the circuit.

No. of Terminals: 2

Simple and straightforward connectivity.

Package Style (Meter): SMALL OUTLINE

Compact size for versatile application in various electronic devices.

Maximum Operating Temperature: 150 °C

Can endure high temperatures without compromising performance.

Trigger Device Type: SILICON SURGE PROTECTOR

Efficiently protects against voltage spikes and surges.

Minimum Operating Temperature: -40 °C

Suitable for use in a wide range of environmental conditions.

Terminal Finish: Tin (Sn)

Enhances conductivity and ensures stable electrical connections.

Terminal Position: DUAL

Provides redundancy and reliability in circuit connections.

Maximum Breakdown Voltage: 400 V

Offers high level of protection against overvoltage situations.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand reflow soldering process without performance degradation.

Peak Reflow Temperature °C: 260

Withstands high-temperature reflow soldering for efficient manufacturing processes.

Technical Specifications

Silicon Surge Protectors NTVB300SB-L attributes and parameters. Explore more Silicon Surge Protectors devices from Onsemi

Specs

Maximum Breakdown Voltage:

400 V

Configuration:

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

260

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

C BEND

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Device Type:

Trade Compliance

NTVB300SB-L Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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