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NTVB180SA-L

Onsemi

NTVB180SA-L by Onsemi

NTVB180SA-L by Onsemi is a silicon surge protector with a max breakdown voltage of 240V. It has a trigger device type of SILICON SURGE PROTECTOR and operates b/w -40 °C to 150°C. Ideal for applications requiring protection against electrical surges in compact spaces.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,036 parts In-Stock

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Digiode

USA . 2,496 parts In-Stock

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2,496

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Distributors (Availability)

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AZTECH Wire

Italy . 524 parts In-Stock

1+ parts

$18.060

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524

$18.060

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Component Stockers USA

USA . 643 parts In-Stock

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$99.990

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643

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Kepictronics

USA . 30,000 parts In-Stock

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Problanco Electronics

Mexico . 8,276 parts In-Stock

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SupplyDigital Components

Austria . 7,568 parts In-Stock

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TANS Electronics

Latvia . 6,413 parts In-Stock

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Kulean Microsystems

USA . 4,308 parts In-Stock

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Corphita

USA . 614 parts In-Stock

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Corohmni

South Africa . 396 parts In-Stock

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UHIMA Technologies

Türkiye . 378 parts In-Stock

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378

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Overview

Protect your electronics with the NTVB180SA-L Silicon Surge Protector by Onsemi. Manufactured by a trusted brand, this high-quality device offers peace of mind against power surges and voltage spikes. Ideal for a variety of applications, this single configuration protector is easy to install with its surface mount design. With a maximum breakdown voltage of 240V and a temperature range from -40 °C to 150°C, this product ensures reliable protection for your valuable equipment. Invest in the NTVB180SA-L today and safeguard your electronics from potential damage.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides strength and durability to the surge protector, ensuring it can withstand harsh environments and repeated use.

Configuration: SINGLE

The single configuration simplifies installation and makes it easy to use with other electronic devices, reducing complexity.

Surface Mount: YES

Being surface mountable allows for easy and flexible installation options, making it suitable for a variety of applications and setups.

Package Shape: RECTANGULAR

The rectangular shape helps in efficient packaging and placement of the surge protector, optimizing space utilization in electronic devices.

Terminal Form: C BEND

The C bend terminal form provides secure and reliable connections, ensuring stable performance and protection against surges.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C ensures the surge protector can function effectively even in demanding conditions without compromising performance.

Trigger Device Type: SILICON SURGE PROTECTOR

The use of silicon surge protector as the trigger device type ensures efficient and rapid response to electrical surges, effectively protecting connected devices.

Maximum Breakdown Voltage: 240 V

The high maximum breakdown voltage of 240V provides superior protection against voltage spikes and surges, safeguarding connected equipment from damage.

Technical Specifications

Silicon Surge Protectors NTVB180SA-L attributes and parameters. Explore more Silicon Surge Protectors devices from Onsemi

Specs

Maximum Breakdown Voltage:

240 V

Configuration:

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

260

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

C BEND

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Device Type:

Trade Compliance

NTVB180SA-L Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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