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NP3100SCMCT3G

Onsemi

NP3100SCMCT3G by Onsemi

NP3100SCMCT3G by Onsemi is a silicon surge protector with a max DC off-state voltage of 275V and max breakdown voltage of 350V. It features a thyristor surge protector configuration, suitable for applications requiring protection against electrical surges. With UL recognition, it operates in temperatures ranging from -55 °C to 150°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,663 parts In-Stock

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Digiode

USA . 313 parts In-Stock

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AZTECH Wire

Italy . 487 parts In-Stock

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$15.100

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Kulean Microsystems

USA . 7,265 parts In-Stock

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Problanco Electronics

Mexico . 5,447 parts In-Stock

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SupplyDigital Components

Austria . 4,317 parts In-Stock

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TANS Electronics

Latvia . 3,802 parts In-Stock

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Corphita

USA . 914 parts In-Stock

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Corohmni

South Africa . 190 parts In-Stock

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UHIMA Technologies

Türkiye . 138 parts In-Stock

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Overview

Looking for reliable surge protection? Look no further than the NP3100SCMCT3G by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers top-quality silicon surge protectors that provide peace of mind against unexpected power surges. Whether you're safeguarding your home electronics or industrial equipment, this product offers unmatched value and reliability. With a durable plastic/epoxy body and a compact design for easy installation, the NP3100SCMCT3G is the ideal choice for all your surge protection needs. Trust Onsemi to keep your devices safe and secure.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the surge protector, making it suitable for various environments.

Configuration: SINGLE

The single configuration simplifies installation and reduces complexity in the setup process.

Surface Mount: YES

The surface mount capability allows for easy and flexible mounting options in different applications.

Package Shape: RECTANGULAR

The rectangular package shape enables space-efficient installation in compact areas.

Terminal Form: C BEND

The C bend terminal form ensures secure connections and enhances reliability in operation.

No. of Terminals: 2

Having 2 terminals simplifies the wiring process and ensures a straightforward setup.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for convenient integration into various systems.

Maximum DC Off-state Voltage: 275 V

The high maximum DC off-state voltage rating provides reliable protection against surges and voltage spikes.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature tolerance ensures the surge protector can withstand elevated temperatures without compromising performance.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

The thyristor surge protector type offers rapid response to surges, effectively safeguarding connected equipment from damage.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature capability allows the surge protector to function reliably even in cold environments.

Terminal Finish: TIN

The terminal finish with tin coating enhances conductivity and corrosion resistance for long-term performance.

Terminal Position: DUAL

The dual terminal position offers flexibility in wiring configurations and ensures secure connections.

Maximum Breakdown Voltage: 350 V

The high maximum breakdown voltage rating provides reliable protection against voltage surges and spikes.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time at peak reflow temperature of 30 seconds, this surge protector can withstand reflow soldering processes efficiently.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260 °C ensures the surge protector can endure reflow soldering without degradation.

Reference Standard: UL RECOGNIZED

Being UL recognized ensures that this surge protector meets the quality and safety standards set by Underwriters Laboratories, giving users peace of mind.

Technical Specifications

Silicon Surge Protectors NP3100SCMCT3G attributes and parameters. Explore more Silicon Surge Protectors devices from Onsemi

Specs

Maximum Breakdown Voltage:

350 V

Configuration:

Maximum DC Off-state Voltage:

275 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

C BEND

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Device Type:

Trade Compliance

NP3100SCMCT3G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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