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NP1800SAT3G

Onsemi

NP1800SAT3G by Onsemi

NP1800SAT3G by Onsemi is a silicon surge protector with a max breakdown voltage of 220V and max operating temperature of 150 °C. It features a thyristor surge protector configuration in a small outline package, suitable for protecting electronic devices from power surges in various applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,738 parts In-Stock

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Digiode

USA . 739 parts In-Stock

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739

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AZTECH Wire

Italy . 428 parts In-Stock

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$12.110

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428

$12.110

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Kepictronics

USA . 120,000 parts In-Stock

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Perfect Parts

USA . 23,188 parts In-Stock

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Problanco Electronics

Mexico . 6,952 parts In-Stock

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Authorized Procurement Solutions

USA . 6,500 parts In-Stock

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6,500

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SupplyDigital Components

Austria . 4,779 parts In-Stock

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TANS Electronics

Latvia . 2,562 parts In-Stock

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Corphita

USA . 1,567 parts In-Stock

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Futuretech Components

Singapore . 536 parts In-Stock

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536

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UHIMA Technologies

Türkiye . 321 parts In-Stock

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Kulean Microsystems

USA . 291 parts In-Stock

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Corohmni

South Africa . 127 parts In-Stock

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Overview

Enhance the protection of your electronic devices with the NP1800SAT3G by Onsemi, a top-quality silicon surge protector designed to safeguard against power surges and voltage spikes. Manufactured by Onsemi, a trusted leader in semiconductor solutions, this compact and efficient device offers peace of mind and reliability for a wide range of applications. With a durable construction and advanced technology, the NP1800SAT3G provides superior protection while maintaining optimal performance. Trust Onsemi's expertise and invest in the NP1800SAT3G for enhanced safety and security for your valuable electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials provide durability and protection, making the surge protector suitable for harsh environments.

Configuration: SINGLE

Single configuration makes the surge protector easy to install and use, perfect for individual device protection.

Surface Mount: YES

Surface mount capability allows for convenient and space-saving installation on circuit boards.

Package Shape: RECTANGULAR

Rectangular shape makes the surge protector fit neatly in electronic devices or on circuit boards.

Terminal Form: C BEND

C bend terminals provide easy soldering and secure connection, ensuring reliable performance.

No. of Terminals: 2

Having two terminals simplifies the connection process and enables proper grounding for effective surge protection.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and allows for compact design integration while ensuring effective surge protection.

Maximum DC Off-state Voltage: 170 V

High maximum DC off-state voltage ensures robust protection against surges and overvoltage events.

Maximum Operating Temperature: 150 °C

High maximum operating temperature indicates the surge protector can withstand extreme conditions without compromising performance.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

Thyristor surge protectors offer fast response times and reliable protection against transient overvoltage conditions.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature ensures the surge protector functions reliably in cold environments.

Terminal Finish: TIN

Tin terminal finish provides corrosion resistance and ensures long-term connectivity for reliable surge protection.

Terminal Position: DUAL

Dual terminal position allows for versatile installation and connection options, enhancing flexibility in use.

Maximum Holding Current: 150 mA

High maximum holding current capacity ensures the surge protector can handle transient current surges without damage.

Maximum Breakdown Voltage: 220 V

High maximum breakdown voltage provides effective protection against overvoltage events, safeguarding connected devices.

Peak Reflow Temperature °C: 260

High peak reflow temperature withstands the soldering process during assembly, ensuring the surge protector retains its performance.

Reference Standard: UL RECOGNIZED

Being UL Recognized signifies compliance with safety standards and provides assurance of product quality and reliability.

Technical Specifications

Silicon Surge Protectors NP1800SAT3G attributes and parameters. Explore more Silicon Surge Protectors devices from Onsemi

Specs

Maximum Breakdown Voltage:

220 V

Configuration:

Maximum DC Off-state Voltage:

170 V

Maximum Holding Current:

150 mA

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Silicon Surge Protectors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

C BEND

Terminal Position:

Trigger Device Type:

Trade Compliance

NP1800SAT3G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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