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NTVB170SC-L

Onsemi

NTVB170SC-L by Onsemi

NTVB170SC-L by Onsemi is a Silicon Surge Protector with max. breakdown voltage of 265V, operating temp. range -40 to 150 °C, and trigger device type as silicon surge protector. It has a small outline package style and is suitable for surface mount applications in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,484 parts In-Stock

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Vyrian

USA . 1,874 parts In-Stock

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1,874

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Kepictronics

USA . 30,000 parts In-Stock

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30,000

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SupplyDigital Components

Austria . 7,010 parts In-Stock

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Kulean Microsystems

USA . 6,509 parts In-Stock

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TANS Electronics

Latvia . 4,922 parts In-Stock

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Problanco Electronics

Mexico . 1,496 parts In-Stock

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Corphita

USA . 1,009 parts In-Stock

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Corohmni

South Africa . 223 parts In-Stock

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UHIMA Technologies

Türkiye . 88 parts In-Stock

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Overview

Protect your electronics with the NTVB170SC-L Silicon Surge Protector by Onsemi. Designed to safeguard against power surges, this high-quality device offers peace of mind for your valuable equipment. With its durable plastic/epoxy construction and compact design, the NTVB170SC-L is perfect for a variety of applications. Trust in the expertise of Onsemi, a leading manufacturer in the industry, and experience the reliability and performance that this surge protector provides. Say goodbye to worries about electrical damage and invest in the superior protection of the NTVB170SC-L today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material helps in providing good insulation and protection for the surge protector, making it durable and long-lasting.

Configuration: SINGLE

The single configuration simplifies the setup and installation process, making it easy to use for various applications.

Surface Mount: YES

Being surface mountable allows for easy integration into circuit boards, saving space and making it ideal for compact designs.

Package Shape: RECTANGULAR

The rectangular shape of the package makes it space-efficient and easy to fit into different electronic devices.

Terminal Form: C BEND

The C bend terminal form ensures secure connections and ease of soldering during the installation process.

No. of Terminals: 2

Having 2 terminals simplifies the wiring process and makes it easier to connect the surge protector in a circuit.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for easy integration into various electronic devices.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this surge protector can withstand harsh conditions and ensure reliable performance.

Trigger Device Type: SILICON SURGE PROTECTOR

The use of silicon surge protector ensures effective protection against surges and spikes, safeguarding connected devices.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows for reliable performance even in cold environments, making it suitable for a wide range of applications.

Terminal Finish: Tin (Sn)

The tin terminal finish provides good conductivity and corrosion resistance, ensuring long-term reliability of the surge protector.

Terminal Position: DUAL

The dual terminal position offers flexibility in installation and enables easy connection to the circuit, making it user-friendly.

Maximum Breakdown Voltage: 265 V

With a high maximum breakdown voltage, this surge protector can effectively handle voltage spikes and protect connected devices.

Maximum Time At Peak Reflow Temperature (s): 30

The short time at peak reflow temperature ensures proper soldering and prevents heat damage to the surge protector during assembly.

Peak Reflow Temperature °C: 260

The high peak reflow temperature capability allows for reliable soldering of the surge protector in a variety of manufacturing processes.

Technical Specifications

Silicon Surge Protectors NTVB170SC-L attributes and parameters. Explore more Silicon Surge Protectors devices from Onsemi

Specs

Maximum Breakdown Voltage:

265 V

Configuration:

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

260

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

C BEND

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Device Type:

Trade Compliance

NTVB170SC-L Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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