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TISP3250H3SL

Texas Instruments

TISP3250H3SL by Texas Instruments

TISP3250H3SL by Texas Instruments is a Silicon Surge Protector with 60A Non Repetitive Peak On-state Current. It features SERIES CONNECTED, CENTER TAP configuration and 190V Max DC Off-state Voltage. Ideal for protecting electronic devices from voltage surges in various applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,912 parts In-Stock

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Digiode

USA . 481 parts In-Stock

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481

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PC Components Company LLC

USA . 331 parts In-Stock

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331

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Bristol Electronics

USA . 100 parts In-Stock

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100

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 44 parts In-Stock

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44

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Distributors (Availability)

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Parana Technologies

USA . 941 parts In-Stock

1+ parts

$3.981

100+ parts

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$4.450

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941

$3.981

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$4.450

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DigiPath Technology Company

USA . 1,575 parts In-Stock

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$4.384

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$4.384

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IDEA Electronic Components Group

UK . 1,833 parts In-Stock

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$4.473

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$4.026

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1,833

$4.473

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$4.026

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ChromeModa Solutions

Germany . 871 parts In-Stock

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$4.473

100+ parts

$3.668

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871

$4.473

$3.668

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One Stop Electronics

USA . 599 parts In-Stock

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$7.100

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599

$7.100

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AZTECH Wire

Italy . 523 parts In-Stock

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$18.523

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523

$18.523

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Corphita

USA . 2,772 parts In-Stock

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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1,000

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Overview

Protect your valuable electronics with the TISP3250H3SL by Texas Instruments, a top-quality silicon surge protector designed to safeguard against power surges and spikes. Manufactured by industry leader Texas Instruments, this series-connected device offers superior protection for your devices with its center tap configuration and 60A peak on-state current. Ideal for a wide range of applications, this thyristor surge protector provides peace of mind and reliability, ensuring your electronics are safe from damaging voltage fluctuations. Invest in the TISP3250H3SL today and experience the quality and performance that only Texas Instruments can deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection for the surge protector, making it a reliable choice for long-term use.

Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

The series connected configuration with center tap and 2 elements provides enhanced surge protection capabilities, offering a higher level of protection for connected devices.

Maximum DC Off-state Voltage: 190 V

The high maximum DC off-state voltage of 190 V ensures that the surge protector can effectively handle power surges and spikes, safeguarding sensitive equipment from damage.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

The use of a thyristor surge protector as the trigger device provides fast and reliable protection against transient voltage spikes, ensuring rapid response and mitigation of potential damage.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this surge protector can withstand high temperatures without compromising its performance, making it suitable for a variety of environments.

Technical Specifications

Silicon Surge Protectors TISP3250H3SL attributes and parameters. Explore more Silicon Surge Protectors devices from Texas Instruments

Specs

Maximum Breakdown Voltage:

250 V

Maximum DC Off-state Voltage:

190 V

Maximum Holding Current:

600 mA

JESD-30 Code:

R-PSIP-T3

Non Repetitive Peak On-state Current:

60 A

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Sub-Category:

Silicon Surge Protectors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TISP3250H3SL Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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