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MMT08B260T3

Onsemi

MMT08B260T3 by Onsemi

The Onsemi MMT08B260T3 is a silicon surge protector with a max breakdown voltage of 320V and non-repetitive peak on-state current of 32A. It is a single configuration device suitable for surface mount applications, featuring a trigger device type of thyristor surge protector. Ideal for protecting electronic circuits from voltage spikes in various industrial and consumer electronics applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 525 parts In-Stock

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Vyrian

USA . 517 parts In-Stock

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517

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

SupplyDigital Components

Austria . 8,378 parts In-Stock

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8,378

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Problanco Electronics

Mexico . 5,494 parts In-Stock

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TANS Electronics

Latvia . 4,425 parts In-Stock

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Kulean Microsystems

USA . 2,427 parts In-Stock

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Corphita

USA . 615 parts In-Stock

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UHIMA Technologies

Türkiye . 543 parts In-Stock

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543

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Corohmni

South Africa . 484 parts In-Stock

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Overview

Protect your valuable electronic devices with the high-quality MMT08B260T3 Silicon Surge Protector by Onsemi. Designed to safeguard against voltage spikes and surges, this single configuration device offers peace of mind for your electronics. With a maximum breakdown voltage of 320V and a non-repetitive peak on-state current of 32A, this surge protector is perfect for a wide range of applications. Whether you're protecting your home entertainment system or sensitive industrial equipment, the MMT08B260T3 provides reliable protection in a compact, easy-to-install package. Trust Onsemi's reputation for excellence and invest in the protection your devices deserve.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, perfect for protecting electronic devices without adding too much weight.

Non Repetitive Peak On-state Current: 32 A

With a high on-state current of 32 A, this surge protector can effectively handle sudden power surges and protect your devices from damage.

Surface Mount: YES

Being surface mountable allows for easy and convenient installation of the surge protector on circuit boards or other electronic devices.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125 °C, this surge protector can withstand high temperatures and continue to protect your devices effectively.

Minimum Operating Temperature: -40 °C

The surge protector can operate efficiently even in very low temperatures down to -40 °C, ensuring protection in various environmental conditions.

Maximum Breakdown Voltage: 320 V

With a maximum breakdown voltage of 320 V, this surge protector can effectively clamp down voltage spikes and protect connected devices from overvoltage damage.

Reference Standard: UL RECOGNIZED

Being UL recognized ensures that the surge protector meets the required safety and quality standards, providing assurance of its reliability and performance.

Technical Specifications

Silicon Surge Protectors MMT08B260T3 attributes and parameters. Explore more Silicon Surge Protectors devices from Onsemi

Specs

Maximum Breakdown Voltage:

320 V

Configuration:

Maximum DC Off-state Voltage:

200 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e0

Non Repetitive Peak On-state Current:

32 A

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Silicon Surge Protectors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

C BEND

Terminal Position:

Trigger Device Type:

Trade Compliance

MMT08B260T3 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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