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TISP3350H3SL

Texas Instruments

TISP3350H3SL by Texas Instruments

TISP3350H3SL by Texas Instruments is a Silicon Surge Protector with 60A peak current, 275V off-state voltage, and 350V breakdown voltage. It is used for surge protection in various applications due to its thyristor trigger device type and series-connected configuration.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Vyrian

USA . 3,036 parts In-Stock

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Digiode

USA . 2,575 parts In-Stock

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2,575

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Cyclops Electronics Ltd

UK . 1,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 900 parts In-Stock

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900

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 500 parts In-Stock

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500

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LWI Electronics Inc

India . 75 parts In-Stock

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75

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Aztec Data Supply Inc.

USA . 300 parts In-Stock

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$2.993

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300

$2.993

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Parana Technologies

USA . 259 parts In-Stock

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$4.230

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$4.666

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259

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ChromeModa Solutions

Germany . 6,267 parts In-Stock

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$4.753

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$3.897

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IDEA Electronic Components Group

UK . 938 parts In-Stock

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$4.753

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$4.278

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938

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AZTECH Wire

Italy . 387 parts In-Stock

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$12.972

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One Stop Electronics

USA . 1,223 parts In-Stock

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$19.100

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Component Stockers USA

USA . 253 parts In-Stock

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$99.990

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Corphita

USA . 4,941 parts In-Stock

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Perfect Parts

USA . 2,016 parts In-Stock

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DigiPath Technology Company

USA . 1,985 parts In-Stock

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$4.285

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Kepictronics

USA . 1,000 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 900 parts In-Stock

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900

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Glotronic Ltd.

UK . 720 parts In-Stock

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Overview

Protect your electronics with the TISP3350H3SL by Texas Instruments, a top-of-the-line silicon surge protector designed to safeguard your devices against power surges. With a reputation for excellence in manufacturing, Texas Instruments ensures that this product meets the highest quality standards. Ideal for a wide range of applications, this surge protector offers peace of mind and reliability, delivering value and protection for your valuable equipment. Say goodbye to worries about power fluctuations and invest in the best with the TISP3350H3SL.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and heat resistance, ensuring longevity and performance under various conditions.

Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Efficient design that enhances protection capabilities and ensures reliable performance.

Non Repetitive Peak On-state Current: 60 A

High current handling capacity for effective surge protection in demanding situations.

Terminal Form: THROUGH-HOLE

Facilitates easy installation and secure connection in circuit boards.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for diverse environments.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

Utilizes advanced technology for quick response to overvoltage events, offering reliable protection for connected devices.

Technical Specifications

Silicon Surge Protectors TISP3350H3SL attributes and parameters. Explore more Silicon Surge Protectors devices from Texas Instruments

Specs

Maximum Breakdown Voltage:

350 V

Maximum DC Off-state Voltage:

275 V

Maximum Holding Current:

600 mA

JESD-30 Code:

R-PSIP-T3

Non Repetitive Peak On-state Current:

60 A

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Sub-Category:

Silicon Surge Protectors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TISP3350H3SL Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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