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MMT10V400

Onsemi

MMT10V400 by Onsemi

The Onsemi MMT10V400 is a Silicon Surge Protector with 200V Repetitive Peak Reverse Voltage and 400V Max Breakdown Voltage. It operates b/w -40 °C to 125°C, suitable for surge protection applications in various electronic devices. This surface-mount device is ideal for safeguarding sensitive components from voltage spikes.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,760 parts In-Stock

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1,760

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Digiode

USA . 502 parts In-Stock

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502

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

SupplyDigital Components

Austria . 4,951 parts In-Stock

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4,951

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Kulean Microsystems

USA . 2,453 parts In-Stock

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2,453

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TANS Electronics

Latvia . 1,770 parts In-Stock

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1,770

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UHIMA Technologies

Türkiye . 957 parts In-Stock

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957

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Corphita

USA . 268 parts In-Stock

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Problanco Electronics

Mexico . 206 parts In-Stock

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Corohmni

South Africa . 73 parts In-Stock

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Overview

Experience the superior quality and reliability of Onsemi's MMT10V400 Silicon Surge Protector. With its surface mount capability and impressive 400V maximum breakdown voltage, this trigger device is perfect for a wide range of applications where protection against voltage spikes is essential. Trust in Onsemi's reputation for excellence in semiconductor manufacturing and invest in the peace of mind that comes with knowing your electronics are safeguarded by the best. Choose the MMT10V400 for unbeatable value and unparalleled protection.

Feature Benefit Bullets

Surface Mount: YES

The ability to be surface mounted makes installation convenient and saves space, making this product suitable for a variety of applications.

Repetitive Peak Reverse Voltage: 200 V

With a high repetitive peak reverse voltage, this surge protector can effectively handle sudden voltage spikes and surges, providing reliable protection for connected devices.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature ensures that this surge protector can withstand heat and operate effectively even in demanding environments.

Trigger Device Type: SILICON SURGE PROTECTOR

Being a silicon surge protector, this product offers fast response times and robust protection against voltage fluctuations, making it a reliable choice for surge protection.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows this surge protector to function efficiently in cold environments without any performance issues, enhancing its versatility.

Maximum Breakdown Voltage: 400 V

With a high maximum breakdown voltage, this surge protector can effectively divert excess voltage away from connected devices, ensuring reliable protection against electrical surges.

Technical Specifications

Silicon Surge Protectors MMT10V400 attributes and parameters. Explore more Silicon Surge Protectors devices from Onsemi

Specs

Maximum Breakdown Voltage:

400 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Repetitive Peak Reverse Voltage:

200 V

Sub-Category:

Silicon Surge Protectors

Surface Mount:

YES

Trigger Device Type:

Trade Compliance

MMT10V400 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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