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TISP83121DR

Texas Instruments

TISP83121DR by Texas Instruments

TISP83121DR by Texas Instruments is a Silicon Surge Protector with 200mA DC Gate Trigger Current, 22A Non Repetitive Peak On-state Current, and 1.8V Max DC Gate Trigger Voltage. It is used for surge protection in applications requiring high current handling capabilities and surface mount compatibility.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 15,500 parts In-Stock

1+ parts

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15,500

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Vyrian

USA . 6,443 parts In-Stock

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6,443

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Digiode

USA . 2,693 parts In-Stock

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2,693

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Bristol Electronics

USA . 2,073 parts In-Stock

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2,073

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,497 parts In-Stock

1+ parts

$2.911

100+ parts

-

1k+ parts

$3.410

10k+ parts

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1,497

$2.911

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$3.410

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DigiPath Technology Company

USA . 14 parts In-Stock

1+ parts

$3.206

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14

$3.206

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ChromeModa Solutions

Germany . 1,315 parts In-Stock

1+ parts

$3.271

100+ parts

$2.682

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1,315

$3.271

$2.682

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IDEA Electronic Components Group

UK . 314 parts In-Stock

1+ parts

$3.271

100+ parts

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$2.944

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314

$3.271

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$2.944

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AZTECH Wire

Italy . 449 parts In-Stock

1+ parts

$5.707

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449

$5.707

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One Stop Electronics

USA . 1,273 parts In-Stock

1+ parts

$11.100

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1,273

$11.100

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Authorized Procurement Solutions

USA . 22,000 parts In-Stock

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22,000

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Corphita

USA . 2,749 parts In-Stock

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2,749

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Kepictronics

USA . 2,500 parts In-Stock

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2,500

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Assy Fe

Spain . 1,866 parts In-Stock

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1,866

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Overview

Safeguard your electronics with the TISP83121DR by Texas Instruments, a top-of-the-line silicon surge protector designed to provide superior protection against power surges. With a reputation for excellence in manufacturing, Texas Instruments delivers a reliable product that exceeds industry standards. Ideal for various applications, this surge protector ensures peace of mind for your valuable devices. Invest in the TISP83121DR today and experience the quality, value, and performance that only Texas Instruments can provide.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 200 mA

The high DC gate trigger current allows for reliable and efficient triggering of the surge protector, ensuring quick response to overvoltage events.

Non Repetitive Peak On-state Current: 22 A

The high peak on-state current capability enables the surge protector to handle sudden spikes in current without being damaged, providing robust protection for sensitive electronic devices.

Surface Mount: YES

The surface mount capability enables easy and convenient installation of the surge protector on circuit boards, saving space and simplifying the assembly process.

Maximum Leakage Current: 0.001 mA

The low leakage current ensures minimal power wastage and helps in maintaining the overall efficiency of the surge protector.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature range allows the surge protector to operate reliably in a wide range of environmental conditions, making it suitable for various applications.

Trigger Device Type: SILICON SURGE PROTECTOR

Being a silicon surge protector, this device offers high performance, fast response times, and durability, making it a dependable choice for surge protection needs.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature ensures that the surge protector can function effectively even in cold environments, providing continuous protection throughout the year.

Maximum DC Gate Trigger Voltage: 1.8 V

The low trigger voltage requirement enables efficient triggering of the surge protector with minimal power consumption, contributing to the overall energy efficiency of the system.

Repetitive Peak Off-state Voltage: 100 V

The high repetitive peak off-state voltage rating ensures that the surge protector can withstand repeated overvoltage events without failure, offering long-term reliability and protection for connected devices.

Technical Specifications

Silicon Surge Protectors TISP83121DR attributes and parameters. Explore more Silicon Surge Protectors devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

200 mA

Maximum DC Gate Trigger Voltage:

1.8 V

Maximum Leakage Current:

.001 mA

Non Repetitive Peak On-state Current:

22 A

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Repetitive Peak Off-state Voltage:

100 V

Sub-Category:

Other Trigger Devices

Surface Mount:

YES

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TISP83121DR Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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