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TISP4300H4BJR

Texas Instruments

TISP4300H4BJR by Texas Instruments

TISP4300H4BJR by Texas Instruments is a single silicon surge protector with 60A non-repetitive peak on-state current. It has a max breakdown voltage of 300V and operates b/w -40°C to 150°C. Ideal for protecting electronic devices from power surges in various applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 45,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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45,000

-

-

-

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Vyrian

USA . 2,005 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,005

-

-

-

-

Digiode

USA . 397 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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397

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-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,483 parts In-Stock

1+ parts

$4.010

100+ parts

-

1k+ parts

$4.475

10k+ parts

-

1,483

$4.010

-

$4.475

-

DigiPath Technology Company

USA . 1,048 parts In-Stock

1+ parts

$4.416

100+ parts

-

1k+ parts

-

10k+ parts

-

1,048

$4.416

-

-

-

IDEA Electronic Components Group

UK . 1,035 parts In-Stock

1+ parts

$4.506

100+ parts

-

1k+ parts

$4.055

10k+ parts

-

1,035

$4.506

-

$4.055

-

ChromeModa Solutions

Germany . 184 parts In-Stock

1+ parts

$4.506

100+ parts

$3.695

1k+ parts

-

10k+ parts

-

184

$4.506

$3.695

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-

AZTECH Wire

Italy . 571 parts In-Stock

1+ parts

$6.359

100+ parts

-

1k+ parts

-

10k+ parts

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571

$6.359

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-

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One Stop Electronics

USA . 1,101 parts In-Stock

1+ parts

$24.100

100+ parts

-

1k+ parts

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10k+ parts

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1,101

$24.100

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-

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Corphita

USA . 4,474 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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4,474

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Overview

Protect your valuable electronics with the TISP4300H4BJR by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers high-quality silicon surge protectors that offer reliable protection against voltage surges and spikes. Ideal for a range of applications, this single configuration device provides peace of mind and ensures the longevity of your equipment. With a maximum breakdown voltage of 300V and a non-repetitive peak on-state current of 60A, this compact and durable device is the ultimate solution for safeguarding your electronics. Trust Texas Instruments to provide you with the best protection for your investments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material ensures durability and protection for the surge protector, making it suitable for long-term use.

Configuration: SINGLE

The single configuration simplifies installation and maintenance, making it a convenient choice for applications requiring a single surge protection device.

Non Repetitive Peak On-state Current: 60 A

With a non-repetitive peak on-state current of 60 A, this surge protector can handle high levels of current surges effectively, providing reliable protection to connected equipment.

Surface Mount: YES

The surface mount feature allows for easy and space-saving installation on circuit boards, making it a versatile option for various electronic devices.

Package Shape: RECTANGULAR

The rectangular package shape offers a compact design that can easily fit into different devices or systems, ensuring efficient use of space.

Terminal Form: C BEND

The C bend terminal form provides a secure and reliable connection, reducing the chances of loose connections or contact issues.

No. of Terminals: 2

Having 2 terminals simplifies the installation process and allows for a straightforward connection to the circuit, ensuring ease of use.

Package Style (Meter): SMALL OUTLINE

The small outline package style offers a compact and lightweight design, making it ideal for applications where space is limited.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this surge protector can withstand high temperatures, ensuring reliable performance even in challenging environments.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

The thyristor surge protector is a highly reliable and efficient trigger device type, providing fast response times to surges and ensuring effective protection for the connected equipment.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40°C, this surge protector can function effectively even in low-temperature environments, offering reliable protection in various conditions.

Terminal Position: DUAL

The dual terminal position provides flexibility in installation and connection options, allowing for versatile use in different circuit configurations.

Maximum Holding Current: 800 mA

The maximum holding current of 800 mA indicates the ability of the surge protector to maintain its protective function without triggering, ensuring continuous protection for connected devices.

Maximum Breakdown Voltage: 300 V

With a maximum breakdown voltage of 300 V, this surge protector can effectively handle voltage surges and spikes, safeguarding connected equipment from potential damage.

Technical Specifications

Silicon Surge Protectors TISP4300H4BJR attributes and parameters. Explore more Silicon Surge Protectors devices from Texas Instruments

Specs

Maximum Breakdown Voltage:

300 V

Configuration:

Maximum Holding Current:

800 mA

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

Non Repetitive Peak On-state Current:

60 A

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Sub-Category:

Silicon Surge Protectors

Surface Mount:

YES

Terminal Form:

C BEND

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TISP4300H4BJR Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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