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TISP4200H4BJ

Texas Instruments

TISP4200H4BJ by Texas Instruments

TISP4200H4BJ by Texas Instruments is a single silicon surge protector with 60A non-repetitive peak on-state current. It features a plastic/epoxy package, surface mount capability, and 200V max breakdown voltage. Ideal for protecting electronic devices from power surges in various applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,660 parts In-Stock

1+ parts

-

100+ parts

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3,660

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Digiode

USA . 2,402 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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2,402

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 987 parts In-Stock

1+ parts

$2.369

100+ parts

-

1k+ parts

$2.868

10k+ parts

-

987

$2.369

-

$2.868

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ChromeModa Solutions

Germany . 3,997 parts In-Stock

1+ parts

$2.662

100+ parts

$2.183

1k+ parts

-

10k+ parts

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3,997

$2.662

$2.183

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IDEA Electronic Components Group

UK . 1,385 parts In-Stock

1+ parts

$2.662

100+ parts

-

1k+ parts

$2.396

10k+ parts

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1,385

$2.662

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$2.396

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AZTECH Wire

Italy . 678 parts In-Stock

1+ parts

$13.293

100+ parts

-

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678

$13.293

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One Stop Electronics

USA . 1,281 parts In-Stock

1+ parts

$22.100

100+ parts

-

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10k+ parts

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1,281

$22.100

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Semicontronic

India . 552 parts In-Stock

1+ parts

$22.100

100+ parts

$21.548

1k+ parts

$21.437

10k+ parts

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552

$22.100

$21.548

$21.437

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Corphita

USA . 2,943 parts In-Stock

1+ parts

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2,943

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DigiPath Technology Company

USA . 1,028 parts In-Stock

1+ parts

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100+ parts

$2.400

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1,028

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$2.400

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Corohmni

South Africa . 243 parts In-Stock

1+ parts

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243

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Overview

Protect your valuable electronics with the TISP4200H4BJ by Texas Instruments, a top-quality silicon surge protector designed to safeguard against power surges and voltage spikes. Manufactured by industry leader Texas Instruments, this single-configured device offers reliable protection for a wide range of applications. With a non-repetitive peak on-state current of 60A and a maximum breakdown voltage of 200V, this compact and easy-to-install surge protector is the perfect solution for ensuring the longevity and reliability of your electronic devices. Trust Texas Instruments for superior quality and performance, and enjoy peace of mind knowing your equipment is protected.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials provide durability and protection, making this surge protector suitable for long-term use in various environments.

Configuration: SINGLE

Single configuration makes installation and setup simple and straightforward, reducing complexity in set up.

Non Repetitive Peak On-state Current: 60 A

High peak on-state current capacity ensures effective protection against sudden surges in electricity.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on various surfaces, saving time and effort during setup.

Package Shape: RECTANGULAR

Rectangular package shape offers versatility in mounting options and fits well in different applications.

Terminal Form: C BEND

C bend terminal form facilitates secure connection and stability when integrating the surge protector into a circuit.

No. of Terminals: 2

Having two terminals simplifies the connection process and ensures proper power distribution within the circuit.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and allows for compact placement, ideal for applications with limited room for components.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

Thyristor surge protector technology offers reliable and rapid response to overvoltage situations, enhancing the overall protection capability.

Terminal Position: DUAL

Dual terminal position enhances flexibility in circuit design and connection, accommodating various configurations and setups.

Maximum Breakdown Voltage: 200 V

High maximum breakdown voltage ensures effective protection against voltage spikes and surges within the designated range.

Technical Specifications

Silicon Surge Protectors TISP4200H4BJ attributes and parameters. Explore more Silicon Surge Protectors devices from Texas Instruments

Specs

Maximum Breakdown Voltage:

200 V

Configuration:

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

Non Repetitive Peak On-state Current:

60 A

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

C BEND

Terminal Position:

Trigger Device Type:

Trade Compliance

TISP4200H4BJ Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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