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TISP3082F3DR

Texas Instruments

TISP3082F3DR by Texas Instruments

TISP3082F3DR by Texas Instruments is a Silicon Surge Protector with 4A Non Repetitive Peak On-state Current. It features SERIES CONNECTED, CENTER TAP configuration and 66V Max DC Off-state Voltage. Ideal for protecting electronic devices from voltage surges in various applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,783 parts In-Stock

1+ parts

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3,783

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Electronic Expediters

USA . 3,187 parts In-Stock

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3,187

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Vyrian

USA . 2,974 parts In-Stock

1+ parts

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2,974

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,384 parts In-Stock

1+ parts

$3.383

100+ parts

-

1k+ parts

$3.910

10k+ parts

-

1,384

$3.383

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$3.910

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ChromeModa Solutions

Germany . 2,380 parts In-Stock

1+ parts

$3.801

100+ parts

$3.117

1k+ parts

-

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2,380

$3.801

$3.117

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IDEA Electronic Components Group

UK . 1,483 parts In-Stock

1+ parts

$3.801

100+ parts

-

1k+ parts

$3.421

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1,483

$3.801

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$3.421

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One Stop Electronics

USA . 1,619 parts In-Stock

1+ parts

$14.100

100+ parts

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1,619

$14.100

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AZTECH Wire

Italy . 534 parts In-Stock

1+ parts

$14.210

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534

$14.210

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Component Stockers USA

USA . 689 parts In-Stock

1+ parts

$99.990

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689

$99.990

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Corphita

USA . 1,587 parts In-Stock

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1,587

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DigiPath Technology Company

USA . 1,249 parts In-Stock

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$3.427

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1,249

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$3.427

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Overview

Protect your valuable electronics with the TISP3082F3DR by Texas Instruments, a top-quality silicon surge protector that offers peace of mind and reliability. Designed with precision and expertise by Texas Instruments, this surge protector is ideal for a wide range of applications. With its series connected configuration and dual elements, this device ensures maximum protection against surges. The TISP3082F3DR provides customers with unmatched value, benefits, and advantages, making it the perfect choice for safeguarding your devices. Trust Texas Instruments for superior quality and performance in surge protection technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the surge protector, ensuring a long lifespan.

Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

The series connected configuration with center tap and 2 elements offers enhanced protection for sensitive electronic devices by efficiently diverting surges.

Non Repetitive Peak On-state Current: 4 A

With a high peak on-state current rating, this surge protector is capable of handling sudden surges effectively, safeguarding connected devices.

Surface Mount: YES

The surface mount design makes installation easy and convenient, ideal for various applications where space is a constraint.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient placement and mounting of the surge protector, making it versatile for different setups.

Terminal Form: GULL WING

The gull wing terminal form ensures secure connections and easy soldering, improving reliability and performance.

Maximum DC Off-state Voltage: 66 V

The high off-state voltage rating provides effective protection against voltage spikes, safeguarding devices within the connected circuit.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

This type of surge protector offers fast response times and high surge handling capabilities, ensuring optimal protection for sensitive equipment.

Maximum Breakdown Voltage: 82 V

With a high breakdown voltage rating, this surge protector can handle voltage surges effectively, preventing damage to connected devices.

Reference Standard: UL RECOGNIZED

Being UL recognized ensures that this surge protector meets industry standards for safety and performance, giving users peace of mind.

Technical Specifications

Silicon Surge Protectors TISP3082F3DR attributes and parameters. Explore more Silicon Surge Protectors devices from Texas Instruments

Specs

Maximum Breakdown Voltage:

82 V

Maximum DC Off-state Voltage:

66 V

JESD-30 Code:

R-PDSO-G8

Non Repetitive Peak On-state Current:

4 A

No. of Elements:

2

No. of Terminals:

8

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TISP3082F3DR Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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