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TISP4290H3BJR

Texas Instruments

TISP4290H3BJR by Texas Instruments

TISP4290H3BJR by Texas Instruments is a single silicon surge protector with 60A non-repetitive peak on-state current. It has a max breakdown voltage of 290V and operates b/w -40°C to 150°C. Ideal for protecting electronic devices from power surges in various applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,337 parts In-Stock

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6,337

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 5,715 parts In-Stock

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5,715

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Cyclops Electronics Ltd

UK . 5,408 parts In-Stock

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5,408

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Legend Electronics Inc.

USA . 3,000 parts In-Stock

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3,000

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Digiode

USA . 1,916 parts In-Stock

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Distributors (Availability)

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One Stop Electronics

USA . 1,585 parts In-Stock

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$1.100

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1,585

$1.100

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Parana Technologies

USA . 994 parts In-Stock

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$4.001

100+ parts

$371.512

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$3.600

10k+ parts

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994

$4.001

$371.512

$3.600

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DigiPath Technology Company

USA . 753 parts In-Stock

1+ parts

$4.405

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753

$4.405

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ChromeModa Solutions

Germany . 2,527 parts In-Stock

1+ parts

$4.495

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$3.686

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2,527

$4.495

$3.686

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IDEA Electronic Components Group

UK . 180 parts In-Stock

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$4.495

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$4.046

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180

$4.495

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$4.046

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AZTECH Wire

Italy . 413 parts In-Stock

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$7.768

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413

$7.768

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Component Stockers USA

USA . 334 parts In-Stock

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$99.990

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334

$99.990

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Corphita

USA . 1,925 parts In-Stock

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Perfect Parts

USA . 11 parts In-Stock

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Overview

Protect your valuable electronics with the TISP4290H3BJR by Texas Instruments, a top-of-the-line silicon surge protector designed to safeguard against power surges and voltage spikes. Manufactured by the industry leader, this single configuration device offers reliable protection for a wide range of applications. With a maximum breakdown voltage of 290V and a non-repetitive peak on-state current of 60A, you can trust that your devices are safe from harm. Invest in peace of mind with the TISP4290H3BJR and keep your electronics running smoothly.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection against external elements, making the surge protector long-lasting.

Non Repetitive Peak On-state Current: 60 A

A high peak on-state current rating ensures that the surge protector can handle sudden voltage spikes effectively, protecting connected devices.

Surface Mount: YES

Surface mount capability allows for easy installation on circuit boards, making it suitable for various electronic applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this surge protector can function reliably even in demanding environmental conditions.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures that the surge protector can operate effectively in a wide range of temperatures, providing versatility.

Maximum Breakdown Voltage: 290 V

A high maximum breakdown voltage rating indicates that the surge protector can withstand high voltages, offering robust protection to connected devices.

Technical Specifications

Silicon Surge Protectors TISP4290H3BJR attributes and parameters. Explore more Silicon Surge Protectors devices from Texas Instruments

Specs

Maximum Breakdown Voltage:

290 V

Configuration:

Maximum Holding Current:

600 mA

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

Non Repetitive Peak On-state Current:

60 A

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Silicon Surge Protectors

Surface Mount:

YES

Terminal Form:

C BEND

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TISP4290H3BJR Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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