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NP2300SCMCT3G

Onsemi

NP2300SCMCT3G by Onsemi

NP2300SCMCT3G by Onsemi is a single silicon surge protector with a max DC off-state voltage of 190V and trigger device type as thyristor. It has a small outline package style, operates b/w -55 to 150 °C, and is ideal for UL recognized applications requiring protection against voltage surges.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,496 parts In-Stock

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Digiode

USA . 293 parts In-Stock

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293

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AZTECH Wire

Italy . 1,024 parts In-Stock

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$15.400

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$15.400

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TANS Electronics

Latvia . 7,437 parts In-Stock

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SupplyDigital Components

Austria . 5,946 parts In-Stock

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Kulean Microsystems

USA . 3,315 parts In-Stock

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Problanco Electronics

Mexico . 2,401 parts In-Stock

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Corphita

USA . 2,103 parts In-Stock

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Corohmni

South Africa . 360 parts In-Stock

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UHIMA Technologies

Türkiye . 327 parts In-Stock

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Overview

Discover the reliable protection that the NP2300SCMCT3G by Onsemi offers against power surges and spikes. With a focus on quality and durability, Onsemi's surge protectors are designed to keep your electronics safe and secure. Ideal for a wide range of applications, this silicon surge protector provides peace of mind in any setting. Trust in Onsemi's reputation for excellence and invest in the value and benefits that the NP2300SCMCT3G brings to your devices.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection against environmental elements and ensures durability of the surge protector.

Configuration: SINGLE

Simplifies installation and maintenance as only one unit needs to be managed.

Surface Mount: YES

Allows for easy and convenient mounting onto circuit boards.

Package Shape: RECTANGULAR

Space-efficient design that fits well within electronic assemblies.

Terminal Form: C BEND

Facilitates secure electrical connections and helps prevent disconnection.

No. of Terminals: 2

Simplified wiring setup and less chance of error during installation.

Package Style (Meter): SMALL OUTLINE

Compact form factor that saves space and allows for integration into various devices.

Maximum DC Off-state Voltage: 190 V

Effective protection against voltage spikes to safeguard connected equipment.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures without performance degradation, ensuring reliability.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

Provides fast response to voltage surges for immediate protection of sensitive electronics.

Minimum Operating Temperature: -55 °C

Suitable for use in cold environments without compromising performance.

Terminal Finish: TIN

Corrosion-resistant finish for long-term reliability and stable electrical connections.

Terminal Position: DUAL

Allows for flexibility in wiring configurations and ensures reliable connections.

Maximum Breakdown Voltage: 260 V

Higher voltage threshold for protection against power surges and spikes.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand high temperatures during soldering process without damage.

Peak Reflow Temperature °C: 260

Can handle high-temperature reflow processes during manufacturing without issues.

Reference Standard: UL RECOGNIZED

Compliance with UL safety standards ensures product quality and reliability.

Technical Specifications

Silicon Surge Protectors NP2300SCMCT3G attributes and parameters. Explore more Silicon Surge Protectors devices from Onsemi

Specs

Maximum Breakdown Voltage:

260 V

Configuration:

Maximum DC Off-state Voltage:

190 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

C BEND

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Device Type:

Trade Compliance

NP2300SCMCT3G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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