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TISP3150F3P

Texas Instruments

TISP3150F3P by Texas Instruments

TISP3150F3P by Texas Instruments is a Silicon Surge Protector with 2 series-connected elements. It has a non-repetitive peak on-state current of 6A and a max DC off-state voltage of 120V. This thyristor surge protector is ideal for applications requiring protection against voltage surges in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,945 parts In-Stock

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3,945

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Digiode

USA . 1,554 parts In-Stock

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1,554

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Distributors (Availability)

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Parana Technologies

USA . 1,249 parts In-Stock

1+ parts

$3.726

100+ parts

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$4.227

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1,249

$3.726

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$4.227

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DigiPath Technology Company

USA . 1,481 parts In-Stock

1+ parts

$4.103

100+ parts

$3.775

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1,481

$4.103

$3.775

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ChromeModa Solutions

Germany . 4,502 parts In-Stock

1+ parts

$4.187

100+ parts

$3.433

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4,502

$4.187

$3.433

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IDEA Electronic Components Group

UK . 1,850 parts In-Stock

1+ parts

$4.187

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$3.768

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1,850

$4.187

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$3.768

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AZTECH Wire

Italy . 349 parts In-Stock

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$8.497

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349

$8.497

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One Stop Electronics

USA . 516 parts In-Stock

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$11.100

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516

$11.100

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Semicontronic

India . 1,191 parts In-Stock

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$25.100

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$24.472

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$24.347

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1,191

$25.100

$24.472

$24.347

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Corphita

USA . 2,498 parts In-Stock

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Corohmni

South Africa . 114 parts In-Stock

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Overview

Protect your valuable electronic equipment with the TISP3150F3P by Texas Instruments, a top-of-the-line silicon surge protector. Manufactured by industry leader Texas Instruments, this device offers unparalleled quality and reliability. Ideal for applications requiring protection against sudden voltage spikes, such as telecommunication systems and industrial controls, the TISP3150F3P ensures peace of mind for customers. With its advanced design and UL recognition, this surge protector provides maximum protection for your devices, making it a must-have for any electronics setup.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material is commonly used for surge protectors as it provides good insulation properties and helps protect internal components from damage.

Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Series connected configuration with center tap and 2 elements ensures effective protection against surges by distributing the voltage evenly across the elements.

Non Repetitive Peak On-state Current: 6 A

With a peak on-state current of 6 A, this surge protector can handle high surge currents without getting damaged, providing reliable protection for connected devices.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and installation in various applications, making it convenient for use in different setups.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer a secure and reliable connection, ensuring stable performance of the surge protector in demanding conditions.

Maximum DC Off-state Voltage: 120 V

With a maximum off-state voltage of 120 V, this surge protector can effectively clamp and divert excess voltage to protect connected equipment from damage.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

Thyristor surge protectors are known for their fast response time and high surge handling capability, making them a reliable choice for protecting sensitive electronic devices.

Maximum Breakdown Voltage: 150 V

Having a maximum breakdown voltage of 150 V ensures that the surge protector activates at the right voltage level to safeguard connected devices from overvoltage events.

Reference Standard: UL RECOGNIZED

Being UL recognized means that this surge protector meets industry standards for safety and performance, providing assurance of quality and reliability.

Technical Specifications

Silicon Surge Protectors TISP3150F3P attributes and parameters. Explore more Silicon Surge Protectors devices from Texas Instruments

Specs

Maximum Breakdown Voltage:

150 V

Maximum DC Off-state Voltage:

120 V

JESD-30 Code:

R-PDIP-T8

Non Repetitive Peak On-state Current:

6 A

No. of Elements:

2

No. of Terminals:

8

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TISP3150F3P Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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