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NP2300SET3G

Onsemi

NP2300SET3G by Onsemi

NP2300SET3G by Onsemi is a Silicon Surge Protector with THYRISTOR technology. It operates b/w -40 °C to 150°C, has a breakdown voltage of 260V, and can hold a max current of 150mA. Ideal for protecting electronic devices from power surges in various applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,593 parts In-Stock

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Digiode

USA . 273 parts In-Stock

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TANS Electronics

Latvia . 7,496 parts In-Stock

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SupplyDigital Components

Austria . 4,968 parts In-Stock

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Problanco Electronics

Mexico . 3,906 parts In-Stock

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Corphita

USA . 2,043 parts In-Stock

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UHIMA Technologies

Türkiye . 790 parts In-Stock

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790

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Corohmni

South Africa . 398 parts In-Stock

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Kulean Microsystems

USA . 283 parts In-Stock

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Overview

Enhance the protection of your electronic devices with the Onsemi NP2300SET3G Silicon Surge Protector. Manufactured by Onsemi, known for its high-quality products, this surface mount device is designed to safeguard against power surges and transient voltage events. Ideal for a wide range of applications, this THYRISTOR surge protector offers reliable performance in extreme temperatures from -40 to 150 °C. Trust in the superior quality and advanced technology of Onsemi to keep your valuable equipment safe and secure.

Feature Benefit Bullets

Surface Mount: YES

Easy installation and space-saving design for quick and efficient protection against surges.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures without compromising performance, ensuring reliable surge protection in various environments.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

Thyristor surge protectors are known for their fast response times and high surge handling capabilities, offering effective protection for sensitive electronic equipment.

Minimum Operating Temperature: -40 °C

Operates efficiently even in extremely cold conditions, making it suitable for use in diverse settings.

Maximum Holding Current: 150 mA

Ability to handle high current levels without compromising protection, ensuring longevity and reliability.

Maximum Breakdown Voltage: 260 V

With a high breakdown voltage, this surge protector can effectively suppress surges and prevent damage to connected devices.

Technical Specifications

Silicon Surge Protectors NP2300SET3G attributes and parameters. Explore more Silicon Surge Protectors devices from Onsemi

Specs

Maximum Breakdown Voltage:

260 V

Maximum Holding Current:

150 mA

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Sub-Category:

Silicon Surge Protectors

Surface Mount:

YES

Trigger Device Type:

Trade Compliance

NP2300SET3G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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