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MMT05B230T3G

Onsemi

MMT05B230T3G by Onsemi

The Onsemi MMT05B230T3G is a single silicon surge protector with a max DC off-state voltage of 170V and max breakdown voltage of 265V. It operates b/w -40 °C to 125°C, making it suitable for protecting electronic devices from power surges in various applications. The device is surface mountable and UL recognized, featuring a thyristor surge protector configuration.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 10,000 parts In-Stock

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Dan-Mar Components

USA . 10,000 parts In-Stock

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10,000

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ACDS - Activité Composants Distribution Service

France . 7,500 parts In-Stock

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7,500

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Vyrian

USA . 5,294 parts In-Stock

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5,294

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Digiode

USA . 2,000 parts In-Stock

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2,000

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Distributors (Availability)

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AZTECH Wire

Italy . 1,107 parts In-Stock

1+ parts

$20.250

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1,107

$20.250

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Kepictronics

USA . 120,000 parts In-Stock

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120,000

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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90,000

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Authorized Procurement Solutions

USA . 7,500 parts In-Stock

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7,500

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Kulean Microsystems

USA . 5,479 parts In-Stock

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5,479

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TANS Electronics

Latvia . 5,261 parts In-Stock

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5,261

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Infinite Electronics LLP (Excess)

. 3,417 parts In-Stock

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3,417

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SupplyDigital Components

Austria . 1,274 parts In-Stock

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Problanco Electronics

Mexico . 380 parts In-Stock

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380

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Corphita

USA . 332 parts In-Stock

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332

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Corohmni

South Africa . 240 parts In-Stock

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240

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UHIMA Technologies

Türkiye . 165 parts In-Stock

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165

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Overview

Experience superior surge protection with the MMT05B230T3G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality silicon surge protectors that guarantee reliability and durability. Ideal for a range of applications, this single configuration device offers customers peace of mind by safeguarding their electronics from damaging power surges. With a maximum breakdown voltage of 265V and UL recognized reference standard, the MMT05B230T3G provides exceptional value and protection for all your electronic devices. Trust Onsemi to keep you connected and protected.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the surge protector durable and resistant to damage, ensuring a longer lifespan.

Configuration: SINGLE

The single configuration simplifies the installation process and makes it easy to use for various applications.

Surface Mount: YES

The ability to surface mount allows for easy and convenient installation in a variety of settings.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125 °C, this surge protector can handle high heat environments without malfunctioning.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

The use of thyristor surge protector technology ensures reliable overvoltage protection for connected equipment.

Maximum Breakdown Voltage: 265 V

The high maximum breakdown voltage of 265 volts ensures that the surge protector can effectively handle power spikes and surges.

Technical Specifications

Silicon Surge Protectors MMT05B230T3G attributes and parameters. Explore more Silicon Surge Protectors devices from Onsemi

Specs

Maximum Breakdown Voltage:

265 V

Configuration:

Maximum DC Off-state Voltage:

170 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

DIACs

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

C BEND

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Device Type:

Trade Compliance

MMT05B230T3G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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