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NP3500SAMCT3G

Onsemi

NP3500SAMCT3G by Onsemi

NP3500SAMCT3G by Onsemi is a single silicon surge protector with 20A non-repetitive peak current. It has a max breakdown voltage of 400V and operates b/w -55 to 150 °C. Ideal for protecting electronic devices from power surges in various applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,068 parts In-Stock

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2,068

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Vyrian

USA . 1,788 parts In-Stock

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1,788

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

SupplyDigital Components

Austria . 7,668 parts In-Stock

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7,668

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TANS Electronics

Latvia . 6,800 parts In-Stock

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6,800

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Kulean Microsystems

USA . 6,186 parts In-Stock

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6,186

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Corphita

USA . 2,478 parts In-Stock

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2,478

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Problanco Electronics

Mexico . 942 parts In-Stock

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942

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Corohmni

South Africa . 339 parts In-Stock

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339

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UHIMA Technologies

Türkiye . 51 parts In-Stock

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Overview

Enhance the protection of your electronic devices with the NP3500SAMCT3G by Onsemi, a top-notch Silicon Surge Protector. Manufactured by Onsemi, a leader in semiconductor solutions, this device ensures high-quality performance and reliability. Ideal for applications requiring surge protection, this product offers peace of mind and convenience to customers. Experience the value and benefits of this surge protector today and safeguard your valuable electronics from potential damage.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material ensures durability and protection for the surge protector, making it suitable for long-term use.

Configuration: SINGLE

The single configuration simplifies installation and maintenance of the surge protector, offering ease of use.

Non Repetitive Peak On-state Current: 20 A

With a high non-repetitive peak on-state current of 20 A, this surge protector can handle sudden surges effectively, providing reliable protection for connected devices.

Surface Mount: YES

The surface mount capability allows for easy and secure installation of the surge protector on circuit boards, saving space and optimizing layout design.

Package Shape: RECTANGULAR

The rectangular package shape offers versatility in placement and integration of the surge protector into various electronic systems.

Terminal Form: C BEND

The C bend terminal form provides a secure connection and ensures stable performance of the surge protector in different environmental conditions.

Maximum DC Off-state Voltage: 320 V

The high maximum DC off-state voltage of 320 V allows the surge protector to effectively suppress electrical surges and protect connected equipment from damage.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this surge protector can withstand high temperatures and maintain its performance in harsh environments.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

The thyristor surge protector type ensures fast response and efficient suppression of surges, enhancing the overall protection provided by the device.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature of -55 °C allows the surge protector to function effectively in cold environments without compromising its performance.

Terminal Finish: TIN

The tin terminal finish provides corrosion resistance and ensures a reliable connection for the surge protector, prolonging its lifespan.

Terminal Position: DUAL

The dual terminal position offers flexibility in installation and connectivity options, allowing for easy integration of the surge protector into different electronic systems.

Maximum Breakdown Voltage: 400 V

The high maximum breakdown voltage of 400 V ensures effective protection against voltage spikes and surges, safeguarding connected devices from potential damage.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time of 30 seconds at peak reflow temperature, this surge protector can withstand the reflow soldering process, ensuring secure attachment to circuit boards.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260 °C allows for reliable soldering of the surge protector onto circuit boards, ensuring proper functionality and performance.

Reference Standard: UL RECOGNIZED

Being UL recognized signifies that the surge protector meets the safety and performance standards set by Underwriters Laboratories, ensuring quality and reliability for the product.

Technical Specifications

Silicon Surge Protectors NP3500SAMCT3G attributes and parameters. Explore more Silicon Surge Protectors devices from Onsemi

Specs

Maximum Breakdown Voltage:

400 V

Configuration:

Maximum DC Off-state Voltage:

320 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Non Repetitive Peak On-state Current:

20 A

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

C BEND

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Device Type:

Trade Compliance

NP3500SAMCT3G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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