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NP3500GARLG

Onsemi

NP3500GARLG by Onsemi

NP3500GARLG by Onsemi is a single silicon surge protector with 320V DC off-state voltage and 400V breakdown voltage. It features a thyristor surge protector configuration, suitable for applications requiring high holding current up to 150000mA. Commonly used in UL recognized systems needing isolated case connection.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,761 parts In-Stock

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Digiode

USA . 748 parts In-Stock

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SupplyDigital Components

Austria . 6,935 parts In-Stock

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Problanco Electronics

Mexico . 6,431 parts In-Stock

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Corphita

USA . 962 parts In-Stock

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TANS Electronics

Latvia . 546 parts In-Stock

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Corohmni

South Africa . 315 parts In-Stock

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UHIMA Technologies

Türkiye . 104 parts In-Stock

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Kulean Microsystems

USA . 56 parts In-Stock

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Overview

The NP3500GARLG by Onsemi is a top-quality Silicon Surge Protector that offers unparalleled protection against power surges. Manufactured by Onsemi, a reputable name in the industry known for delivering high-performance products, this surge protector is ideal for a wide range of applications. With its durable plastic/epoxy body and reliable thyristor surge protector configuration, customers can trust in the NP3500GARLG to safeguard their valuable electronics. Invest in peace of mind with the NP3500GARLG and ensure your devices are safe from damaging voltage spikes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the surge protector lightweight and durable, perfect for long-term use.

Configuration: SINGLE

The single configuration makes it simple and easy to install, ensuring straightforward setup for protection against electrical surges.

Terminal Form: WIRE

The wire terminal form allows for easy connection to power sources, making installation convenient and hassle-free.

Maximum DC Off-state Voltage: 320 V

The high maximum DC off-state voltage of 320V provides strong protection against voltage spikes and surges, safeguarding your devices.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

The thyristor surge protector type offers reliable protection and quick response to surges, ensuring your devices are safe from potential damage.

Maximum Holding Current: 150000 mA

The high maximum holding current of 150000 mA allows the surge protector to handle large surges effectively, providing robust protection for your electronics.

Maximum Breakdown Voltage: 400 V

The maximum breakdown voltage of 400V ensures that the surge protector can withstand high voltage levels, offering peace of mind during electrical disturbances.

Reference Standard: UL RECOGNIZED

Being UL recognized, this surge protector meets strict safety and performance standards, guaranteeing reliable protection for your devices.

Technical Specifications

Silicon Surge Protectors NP3500GARLG attributes and parameters. Explore more Silicon Surge Protectors devices from Onsemi

Specs

Maximum Breakdown Voltage:

400 V

Case Connection:

Configuration:

Maximum DC Off-state Voltage:

320 V

Maximum Holding Current:

150000 mA

JEDEC-95 Code:

DO-15

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Silicon Surge Protectors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

WIRE

Terminal Position:

Trigger Device Type:

Trade Compliance

NP3500GARLG Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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