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TISP2380F3DR

Texas Instruments

TISP2380F3DR by Texas Instruments

TISP2380F3DR by Texas Instruments is a silicon surge protector with 3 delta-connected elements. It has a non-repetitive peak on-state current of 4A and max breakdown voltage of 380V. Ideal for applications requiring protection against voltage surges, it features a small outline package style and Gull Wing terminal form for surface mount installation.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,120 parts In-Stock

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3,120

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 2,500 parts In-Stock

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2,500

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Elcom Components

USA . 1,042 parts In-Stock

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1,042

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Digiode

USA . 999 parts In-Stock

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999

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Parana Technologies

USA . 2,117 parts In-Stock

1+ parts

$1.883

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$2.427

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2,117

$1.883

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$2.427

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DigiPath Technology Company

USA . 1,729 parts In-Stock

1+ parts

$2.074

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$1.908

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1,729

$2.074

$1.908

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ChromeModa Solutions

Germany . 4,294 parts In-Stock

1+ parts

$2.116

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$1.735

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4,294

$2.116

$1.735

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IDEA Electronic Components Group

UK . 2,255 parts In-Stock

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$2.116

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$1.904

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$2.116

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$1.904

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AZTECH Wire

Italy . 692 parts In-Stock

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$18.410

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692

$18.410

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One Stop Electronics

USA . 701 parts In-Stock

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$19.100

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701

$19.100

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Corphita

USA . 3,232 parts In-Stock

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Overview

Protect your valuable electronic devices with the TISP2380F3DR by Texas Instruments, a top-quality silicon surge protector designed to keep your equipment safe from power surges and transients. Manufactured by industry leader Texas Instruments, this product offers unmatched reliability and performance in safeguarding against voltage spikes. Ideal for a range of applications, this surge protector is the perfect solution for ensuring the longevity and efficiency of your electronics. Trust Texas Instruments to deliver the protection you need with the TISP2380F3DR.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durable and sturdy construction, ensuring longevity and reliability of the surge protector.

Configuration: DELTA CONNECTED, 3 ELEMENTS

Optimal configuration for effective surge protection and handling of power surges.

Non Repetitive Peak On-state Current: 4 A

Capable of handling high peak currents, making it suitable for protecting sensitive electronics from sudden power spikes.

Surface Mount: YES

Easy to install and suitable for a variety of systems and applications.

Package Shape: RECTANGULAR

Sleek and compact design for easy integration into different electronic setups.

Terminal Form: GULL WING

Efficient terminal design for secure connections and optimum performance.

No. of Terminals: 8

Sufficient terminals for easy connectivity and installation.

Maximum DC Off-state Voltage: 270 V

Offers high voltage protection to devices and equipment connected to the surge protector.

Trigger Device Type: SILICON SURGE PROTECTOR

Reliable and effective in dissipating energy from power surges to protect connected devices.

Maximum Breakdown Voltage: 380 V

Provides a safety margin against voltage spikes, enhancing overall protection capability.

Reference Standard: UL RECOGNIZED

Certified to meet safety and performance standards, ensuring peace of mind for users.

Technical Specifications

Silicon Surge Protectors TISP2380F3DR attributes and parameters. Explore more Silicon Surge Protectors devices from Texas Instruments

Specs

Maximum Breakdown Voltage:

380 V

Maximum DC Off-state Voltage:

270 V

JESD-30 Code:

R-PDSO-G8

Non Repetitive Peak On-state Current:

4 A

No. of Elements:

3

No. of Terminals:

8

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TISP2380F3DR Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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