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NP0900SBT3G

Onsemi

NP0900SBT3G by Onsemi

NP0900SBT3G by Onsemi is a single silicon surge protector with 2 terminals, max breakdown voltage of 98V, and trigger device type as thyristor. It operates b/w -40 to 150 °C and is UL recognized. Ideal for protecting electronic devices from power surges in various applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 12,763 parts In-Stock

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12,763

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Digiode

USA . 805 parts In-Stock

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805

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AZTECH Wire

Italy . 253 parts In-Stock

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$13.560

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253

$13.560

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Component Stockers USA

USA . 508 parts In-Stock

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$99.990

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508

$99.990

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SupplyDigital Components

Austria . 6,830 parts In-Stock

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6,830

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Problanco Electronics

Mexico . 5,190 parts In-Stock

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5,190

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Kulean Microsystems

USA . 2,605 parts In-Stock

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2,605

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Corphita

USA . 1,253 parts In-Stock

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TANS Electronics

Latvia . 905 parts In-Stock

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905

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UHIMA Technologies

Türkiye . 447 parts In-Stock

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447

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Corohmni

South Africa . 307 parts In-Stock

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Overview

Protect your valuable electronics with the NP0900SBT3G by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-quality silicon surge protectors that provide reliable protection against power surges and voltage spikes. This single configuration device is ideal for various applications, offering customers peace of mind knowing their equipment is safeguarded. With a maximum DC off-state voltage of 75V and a maximum breakdown voltage of 98V, this surge protector is UL recognized and designed to withstand extreme temperatures. Trust Onsemi to deliver superior performance and protection for your electronic devices.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection against external elements, ensuring a longer lifespan for the surge protector.

Configuration: SINGLE

Simplified design makes installation and usage straightforward, ideal for basic surge protection needs.

Surface Mount: YES

Can be easily mounted on circuit boards, saving space and making it suitable for various electronic devices.

Maximum Operating Temperature: 150 °C

Withstands high temperatures, allowing for reliable operation in different environments.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

Utilizes advanced technology for efficient surge protection, ensuring devices are safeguarded from power spikes.

Terminal Finish: TIN

Tin coating on terminals provides excellent conductivity and prevents corrosion, enhancing the overall performance of the surge protector.

Maximum Breakdown Voltage: 98 V

Capable of handling high voltage surges, protecting connected devices effectively.

Reference Standard: UL RECOGNIZED

Compliance with UL standards ensures the surge protector meets safety and quality requirements, giving users peace of mind.

Technical Specifications

Silicon Surge Protectors NP0900SBT3G attributes and parameters. Explore more Silicon Surge Protectors devices from Onsemi

Specs

Maximum Breakdown Voltage:

98 V

Configuration:

Maximum DC Off-state Voltage:

75 V

Maximum Holding Current:

150 mA

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Silicon Surge Protectors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

C BEND

Terminal Position:

Trigger Device Type:

Trade Compliance

NP0900SBT3G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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