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TISP2290F3P

Texas Instruments

TISP2290F3P by Texas Instruments

TISP2290F3P by Texas Instruments is a silicon surge protector with 3 elements in delta configuration. It has a max breakdown voltage of 290V and can handle non-repetitive peak on-state current of 6A. Ideal for protecting electronic devices from voltage surges, it features UL recognized reference standard and through-hole terminal form.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,553 parts In-Stock

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Digiode

USA . 3,159 parts In-Stock

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3,159

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LIBRA Elektronik GmbH

Germany . 3,050 parts In-Stock

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3,050

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 600 parts In-Stock

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600

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Legend Electronics Inc.

USA . 209 parts In-Stock

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One Stop Electronics

USA . 468 parts In-Stock

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$2.100

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468

$2.100

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Parana Technologies

USA . 989 parts In-Stock

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$3.648

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$4.156

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989

$3.648

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$4.156

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ChromeModa Solutions

Germany . 6,411 parts In-Stock

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$4.099

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$3.361

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$4.099

$3.361

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IDEA Electronic Components Group

UK . 569 parts In-Stock

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$4.099

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$3.689

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569

$4.099

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AZTECH Wire

Italy . 765 parts In-Stock

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$17.544

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765

$17.544

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Corphita

USA . 2,188 parts In-Stock

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DigiPath Technology Company

USA . 1,103 parts In-Stock

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$3.696

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Assy Fe

Spain . 30 parts In-Stock

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Overview

Protect your electronics with the TISP2290F3P by Texas Instruments, a top-of-the-line silicon surge protector designed to keep your devices safe from power surges and spikes. With a reputation for producing high-quality components, Texas Instruments delivers reliability and peace of mind with this product. Ideal for a wide range of applications, this surge protector is essential for safeguarding sensitive equipment such as telecommunication systems, industrial automation, and consumer electronics. Invest in the TISP2290F3P today and experience the superior protection and performance it brings to your devices.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body provides good protection against environmental factors and ensures durability.

Configuration: DELTA CONNECTED, 3 ELEMENTS

The delta connected configuration with 3 elements enhances the efficiency and performance of the surge protector.

Non Repetitive Peak On-state Current: 6 A

The high non repetitive peak on-state current capacity of 6 A ensures reliable protection against sudden surges.

Terminal Form: THROUGH-HOLE

The through-hole terminal form allows for easy and secure installation in a variety of applications.

Maximum DC Off-state Voltage: 220 V

With a maximum DC off-state voltage of 220 V, this surge protector offers effective protection against high voltage spikes.

Trigger Device Type: SILICON SURGE PROTECTOR

Being a silicon surge protector, it offers superior performance and reliability in safeguarding electronic devices.

Maximum Breakdown Voltage: 290 V

The maximum breakdown voltage of 290 V ensures that the surge protector can handle high voltage spikes effectively.

Reference Standard: UL RECOGNIZED

Being UL recognized indicates that the surge protector meets safety and performance standards, providing peace of mind to users.

Technical Specifications

Silicon Surge Protectors TISP2290F3P attributes and parameters. Explore more Silicon Surge Protectors devices from Texas Instruments

Specs

Maximum Breakdown Voltage:

290 V

Maximum DC Off-state Voltage:

220 V

JESD-30 Code:

R-PDIP-T8

Non Repetitive Peak On-state Current:

6 A

No. of Elements:

3

No. of Terminals:

8

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TISP2290F3P Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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