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THBT20012

STMicroelectronics

THBT20012 by STMicroelectronics

THBT20012 by STMicroelectronics is a silicon surge protector designed for robust circuit protection. It features a max breakdown voltage of 290 V, handles non-repetitive peak on-state current up to 5 A, and comes in an 8-terminal rectangular package. Ideal for safeguarding electronic devices from voltage spikes, it ensures reliable performance in various applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,387 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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3,387

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-

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Vyrian

USA . 2,263 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2,263

-

-

-

-

Anansix

USA . 1,008 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

-

1,008

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,671 parts In-Stock

1+ parts

$3.346

100+ parts

-

1k+ parts

$3.011

10k+ parts

-

1,671

$3.346

-

$3.011

-

MKK Technologies

India . 1,102 parts In-Stock

1+ parts

$6.292

100+ parts

-

1k+ parts

-

10k+ parts

-

1,102

$6.292

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-

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DigiPath Technology Company

USA . 1,102 parts In-Stock

1+ parts

$6.292

100+ parts

-

1k+ parts

-

10k+ parts

-

1,102

$6.292

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-

-

Corphita

USA . 4,044 parts In-Stock

1+ parts

-

100+ parts

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4,044

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-

-

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Parana Technologies

USA . 2,242 parts In-Stock

1+ parts

-

100+ parts

$4.001

1k+ parts

-

10k+ parts

-

2,242

-

$4.001

-

-

Overview

Elevate your electronic designs with the THBT20012 from STMicroelectronics, a trusted leader in innovation. This robust Silicon Surge Protector ensures superior protection against voltage spikes, enhancing the reliability of your devices. With its compact, dual-terminal design, it simplifies integration into various applications—from consumer electronics to industrial machinery. Trust in STMicroelectronics for unmatched quality and performance that safeguards your investments and boosts your system’s longevity.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy ensures excellent protection against environmental factors, making this product reliable for long-term use.

Configuration: DELTA CONNECTED, 3 ELEMENTS

This configuration allows for effective surge protection in three-phase systems, enhancing efficiency and safety.

Non Repetitive Peak On-state Current: 5 A

With a peak current capacity of 5 A, the device can handle transient surges effectively, offering robust protection.

Package Shape: RECTANGULAR

The rectangular package shape is designed for easy integration into various applications while maximizing space efficiency.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides stable and reliable connections, ensuring a secure installation in circuit boards.

No. of Elements: 3

Having three elements enhances the protection capability, allowing for better handling of surge incidents across phases.

No. of Terminals: 8

With 8 terminals, this product offers versatility in connections, making it suitable for a wide range of applications.

Package Style (Meter): IN-LINE

The in-line package style supports efficient space usage and easy installation, particularly in compact or space-constrained environments.

Trigger Device Type: SILICON SURGE PROTECTOR

Being a silicon surge protector means it is designed to respond quickly to high-voltage spikes, ensuring maximum protection for sensitive electronic components.

Terminal Position: DUAL

Dual terminal positioning allows for flexible circuit layout options, making the device adaptable to different installation requirements.

Maximum Breakdown Voltage: 290 V

With a maximum breakdown voltage of 290 V, this product is capable of protecting your equipment from a variety of voltage surges, ensuring longevity and reliability.

Technical Specifications

Silicon Surge Protectors THBT20012 attributes and parameters. Explore more Silicon Surge Protectors devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

290 V

JESD-30 Code:

R-PDIP-T8

Non Repetitive Peak On-state Current:

5 A

No. of Elements:

3

No. of Terminals:

8

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

THBT20012 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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