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THBT15012

STMicroelectronics

THBT15012 by STMicroelectronics

THBT15012 by STMicroelectronics is a silicon surge protector designed for robust applications. It features a max breakdown voltage of 210 V, non-repetitive peak on-state current of 5 A, and a dual terminal configuration. Ideal for protecting sensitive electronics from voltage spikes.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,359 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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4,359

-

-

-

-

Anansix

USA . 1,838 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,838

-

-

-

-

Vyrian

USA . 1,771 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,771

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,811 parts In-Stock

1+ parts

$3.055

100+ parts

-

1k+ parts

$2.750

10k+ parts

-

1,811

$3.055

-

$2.750

-

MKK Technologies

India . 1,356 parts In-Stock

1+ parts

$5.745

100+ parts

-

1k+ parts

-

10k+ parts

-

1,356

$5.745

-

-

-

DigiPath Technology Company

USA . 1,356 parts In-Stock

1+ parts

$5.745

100+ parts

-

1k+ parts

-

10k+ parts

-

1,356

$5.745

-

-

-

Corphita

USA . 3,873 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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3,873

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-

-

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Parana Technologies

USA . 1,775 parts In-Stock

1+ parts

-

100+ parts

$3.653

1k+ parts

-

10k+ parts

-

1,775

-

$3.653

-

-

Overview

Elevate your circuit protection with the THBT15012 from STMicroelectronics—a trusted leader in innovative semiconductor solutions. Designed for robust performance, this silicon surge protector ensures reliable defense against voltage spikes, enhancing the durability of your electronic devices. With its compact design and efficient configuration, it seamlessly integrates into various applications, offering peace of mind at every turn. Choose quality and innovation; choose THBT15012 for unmatched reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures strong protection against environmental factors, making it suitable for both indoor and outdoor applications.

Configuration: DELTA CONNECTED, 3 ELEMENTS

The delta configuration allows for effective voltage handling and stability in surge protection, ensuring reliable performance across electrical systems.

Non Repetitive Peak On-state Current: 5 A

With a non-repetitive peak on-state current of 5 A, this product offers robust protection against high surges, preventing potential damage to connected equipment.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient space utilization in circuit designs, making integration into various setups straightforward and cost-effective.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and stability during installation, making it an ideal choice for both prototyping and production environments.

No. of Elements: 3

Having three elements enhances the product's ability to handle multiple surge scenarios, providing more comprehensive protection for sensitive electronics.

No. of Terminals: 8

With 8 terminals, this product offers versatile connectivity options, facilitating easier integration into various circuit configurations.

Package Style (Meter): IN-LINE

The in-line package style simplifies installation and offers flexibility in circuit layouts, making it user-friendly and adaptable to different applications.

Trigger Device Type: SILICON SURGE PROTECTOR

Utilizing silicon technology ensures fast response times to surges, maximizing the protection of connected devices against voltage spikes.

Terminal Position: DUAL

Dual terminal positioning enhances design flexibility, enabling easier connection options in compact spaces and improving overall circuit organization.

Maximum Breakdown Voltage: 210 V

With a maximum breakdown voltage of 210 V, this surge protector effectively safeguards equipment from high-voltage transients, ensuring reliability in critical applications.

Technical Specifications

Silicon Surge Protectors THBT15012 attributes and parameters. Explore more Silicon Surge Protectors devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

210 V

JESD-30 Code:

R-PDIP-T8

Non Repetitive Peak On-state Current:

5 A

No. of Elements:

3

No. of Terminals:

8

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

THBT15012 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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