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NP1300SET3G

Onsemi

NP1300SET3G by Onsemi

NP1300SET3G by Onsemi is a Silicon Surge Protector with THYRISTOR technology. It has a max operating temp of 150 °C, min operating temp of -40°C, and max breakdown voltage of 160V. Ideal for surface mount applications in protecting electronic devices from power surges.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,092 parts In-Stock

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Digiode

USA . 1,174 parts In-Stock

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Distributors (Availability)

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Problanco Electronics

Mexico . 7,319 parts In-Stock

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7,319

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TANS Electronics

Latvia . 6,592 parts In-Stock

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SupplyDigital Components

Austria . 6,565 parts In-Stock

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Kulean Microsystems

USA . 4,681 parts In-Stock

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Corphita

USA . 2,225 parts In-Stock

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UHIMA Technologies

Türkiye . 824 parts In-Stock

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824

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Corohmni

South Africa . 470 parts In-Stock

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Overview

Enhance your electronic devices with the NP1300SET3G by Onsemi, a top-quality Silicon Surge Protector designed to safeguard against power surges. With a maximum operating temperature of 150 °C and a minimum of -40°C, this THYRISTOR SURGE PROTECTOR offers reliable protection in a wide range of applications. Onsemi's reputation for excellence ensures that you are getting a product that is both durable and efficient. Trust in the NP1300SET3G to provide peace of mind and keep your electronics safe from unexpected power fluctuations.

Feature Benefit Bullets

Surface Mount: YES

Being surface mountable allows for easy installation on printed circuit boards, making it convenient to integrate into electronics systems.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this surge protector can withstand harsh environmental conditions and provide reliable protection over a wide range of temperatures.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

Thyristor surge protectors are known for their fast response time and high surge current handling capabilities, making them ideal for protecting sensitive electronic equipment.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures that the surge protector can function effectively even in cold environments, providing continuous protection throughout the year.

Maximum Holding Current: 150 mA

The high maximum holding current indicates the surge protector's ability to handle sustained surges without sacrificing performance or reliability.

Maximum Breakdown Voltage: 160 V

The high maximum breakdown voltage ensures that the surge protector can effectively divert high-voltage surges away from connected equipment, safeguarding against damage and downtime.

Technical Specifications

Silicon Surge Protectors NP1300SET3G attributes and parameters. Explore more Silicon Surge Protectors devices from Onsemi

Specs

Maximum Breakdown Voltage:

160 V

Maximum Holding Current:

150 mA

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Sub-Category:

Silicon Surge Protectors

Surface Mount:

YES

Trigger Device Type:

Trade Compliance

NP1300SET3G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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