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NP1300SBT3G

Onsemi

NP1300SBT3G by Onsemi

NP1300SBT3G by Onsemi is a single silicon surge protector with a max DC off-state voltage of 120V and trigger device type as thyristor. It has a max operating temperature of 150 °C, making it suitable for applications requiring protection against voltage surges in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,103 parts In-Stock

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3,103

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Digiode

USA . 1,706 parts In-Stock

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1,706

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Distributors (Availability)

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AZTECH Wire

Italy . 706 parts In-Stock

1+ parts

$20.250

100+ parts

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706

$20.250

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Component Stockers USA

USA . 620 parts In-Stock

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$99.990

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620

$99.990

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Kepictronics

USA . 120,000 parts In-Stock

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120,000

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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90,000

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Problanco Electronics

Mexico . 8,225 parts In-Stock

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8,225

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SupplyDigital Components

Austria . 8,200 parts In-Stock

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8,200

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TANS Electronics

Latvia . 6,457 parts In-Stock

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6,457

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Perfect Parts

USA . 1,904 parts In-Stock

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1,904

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Corphita

USA . 1,797 parts In-Stock

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Corohmni

South Africa . 430 parts In-Stock

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430

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UHIMA Technologies

Türkiye . 390 parts In-Stock

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390

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Kulean Microsystems

USA . 325 parts In-Stock

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325

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Overview

Experience the ultimate protection with the NP1300SBT3G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Silicon Surge Protectors that guarantee peace of mind for your electronic devices. Whether you're safeguarding sensitive equipment or ensuring uninterrupted power supply, this compact and reliable device is designed to exceed expectations. With its advanced technology and durable construction, the NP1300SBT3G offers unmatched value, benefits, and advantages to customers seeking superior surge protection solutions. Trust Onsemi to provide the best-in-class protection for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and protection for the surge protector, making it ideal for long-term use.

Configuration: SINGLE

The single configuration simplifies installation and maintenance, making it a convenient choice for users.

Surface Mount: YES

Being surface mountable allows for easy and flexible installation options, making it suitable for a variety of applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this surge protector can withstand various environmental conditions, ensuring reliable performance.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

The use of thyristor surge protector as the trigger device ensures efficient and reliable protection against voltage surges.

Maximum Breakdown Voltage: 160 V

The high maximum breakdown voltage provides effective protection against voltage spikes, making it a reliable choice for surge protection.

Technical Specifications

Silicon Surge Protectors NP1300SBT3G attributes and parameters. Explore more Silicon Surge Protectors devices from Onsemi

Specs

Maximum Breakdown Voltage:

160 V

Configuration:

Maximum DC Off-state Voltage:

120 V

Maximum Holding Current:

150 mA

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Silicon Surge Protectors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

C BEND

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Device Type:

Trade Compliance

NP1300SBT3G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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