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TISP61060D

Texas Instruments

TISP61060D by Texas Instruments

TISP61060D by Texas Instruments is a Silicon Surge Protector with 6A Non Repetitive Peak On-state Current and 100V Max DC Off-state Voltage. It features Gull Wing terminals, Rectangular package shape, and is surface mountable. Ideal for protecting electronic devices from voltage surges in various applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,210 parts In-Stock

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Digiode

USA . 2,979 parts In-Stock

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2,979

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ACDS - Activité Composants Distribution Service

France . 413 parts In-Stock

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413

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Bristol Electronics

USA . 413 parts In-Stock

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413

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Dan-Mar Components

USA . 413 parts In-Stock

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413

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,249 parts In-Stock

1+ parts

$2.245

100+ parts

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1k+ parts

$2.749

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1,249

$2.245

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$2.749

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ChromeModa Solutions

Germany . 2,421 parts In-Stock

1+ parts

$2.523

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$2.069

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2,421

$2.523

$2.069

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IDEA Electronic Components Group

UK . 697 parts In-Stock

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$2.523

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$2.271

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697

$2.523

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$2.271

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AZTECH Wire

Italy . 656 parts In-Stock

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$16.209

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656

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One Stop Electronics

USA . 1,168 parts In-Stock

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$19.100

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$19.100

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Corphita

USA . 3,591 parts In-Stock

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3,591

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DigiPath Technology Company

USA . 1,811 parts In-Stock

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$2.275

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1,811

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$2.275

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Overview

Protect your valuable electronic devices with the TISP61060D from Texas Instruments. As a leader in the industry, Texas Instruments ensures top-quality products that deliver reliable surge protection. The TISP61060D is a silicon surge protector designed to safeguard your equipment from voltage spikes, providing peace of mind and extended device lifespan. With its compact package style and easy surface mount configuration, this thyristor surge protector is ideal for a wide range of applications. Trust Texas Instruments to keep your electronics safe and secure with the TISP61060D.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and impact resistance, ensuring the surge protector can withstand harsh environments.

Configuration: COMPLEX

The complex configuration allows for advanced protection mechanisms to be implemented, enhancing the overall performance of the surge protector.

Non Repetitive Peak On-state Current: 6 A

This high peak current handling capability ensures effective protection against sudden voltage spikes or surges.

Surface Mount: YES

Being surface mountable makes installation easier and more convenient, especially in space-constrained applications.

Package Shape: RECTANGULAR

The rectangular shape allows for easy integration into existing circuit designs or systems.

Terminal Form: GULL WING

The gull wing terminal form provides secure and reliable connections, reducing the risk of intermittent contact or failure.

No. of Elements: 2

Having multiple elements increases the overall protection level and redundancy of the surge protector.

No. of Terminals: 8

More terminals allow for flexible connection options and ease of installation in various setups.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and enables compact designs without compromising performance.

Maximum DC Off-state Voltage: 100 V

The high off-state voltage rating ensures adequate protection across a wide range of operating conditions.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

The use of thyristor technology enhances the responsiveness and reliability of the surge protector in suppressing surges effectively.

Terminal Position: DUAL

The dual terminal position provides additional flexibility in installation and connection options.

Maximum Breakdown Voltage: 68 V

The breakdown voltage exceeding the maximum DC off-state voltage ensures reliable protection against overvoltage events.

Technical Specifications

Silicon Surge Protectors TISP61060D attributes and parameters. Explore more Silicon Surge Protectors devices from Texas Instruments

Specs

Maximum Breakdown Voltage:

68 V

Configuration:

Maximum DC Off-state Voltage:

100 V

JESD-30 Code:

R-PDSO-G8

Non Repetitive Peak On-state Current:

6 A

No. of Elements:

2

No. of Terminals:

8

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TISP61060D Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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