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TISP4395M3BJR

Texas Instruments

TISP4395M3BJR by Texas Instruments

TISP4395M3BJR by Texas Instruments is a single silicon surge protector with 32A peak current. It operates b/w -40°C to 150°C, with a breakdown voltage of 395V. Ideal for protecting electronic devices from power surges in various applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,472 parts In-Stock

1+ parts

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7,472

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 5,615 parts In-Stock

1+ parts

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5,615

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Digiode

USA . 759 parts In-Stock

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759

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Distributors (Availability)

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One Stop Electronics

USA . 915 parts In-Stock

1+ parts

$1.100

100+ parts

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915

$1.100

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Parana Technologies

USA . 1,011 parts In-Stock

1+ parts

$3.161

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-

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$3.681

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1,011

$3.161

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$3.681

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DigiPath Technology Company

USA . 770 parts In-Stock

1+ parts

$3.481

100+ parts

$3.202

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770

$3.481

$3.202

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ChromeModa Solutions

Germany . 6,471 parts In-Stock

1+ parts

$3.552

100+ parts

$2.913

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6,471

$3.552

$2.913

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IDEA Electronic Components Group

UK . 1,194 parts In-Stock

1+ parts

$3.552

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$3.197

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1,194

$3.552

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$3.197

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AZTECH Wire

Italy . 406 parts In-Stock

1+ parts

$6.718

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406

$6.718

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

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15,000

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Corphita

USA . 2,480 parts In-Stock

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2,480

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Overview

Protect your valuable electronics with the TISP4395M3BJR by Texas Instruments, a top-of-the-line silicon surge protector designed to safeguard against power surges and spikes. With a manufacturer like Texas Instruments known for their quality and reliability, you can trust that this device will provide superior protection for your devices. Whether you're looking to protect your home appliances or industrial equipment, this surge protector is the perfect solution. Invest in the TISP4395M3BJR and enjoy peace of mind knowing your electronics are safe from harmful electrical disturbances.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and rugged construction, ensuring the surge protector can withstand various environmental conditions.

Configuration: SINGLE

Simplicity in design allows for easy installation and maintenance.

Non Repetitive Peak On-state Current: 32 A

High current handling capacity ensures effective protection against sudden surges.

Surface Mount: YES

Convenient surface mount design allows for easy integration into existing circuits.

Package Shape: RECTANGULAR

Compact shape enables space-saving installation in various electronic devices.

Terminal Form: C BEND

C BEND terminals provide secure connections and stability within the circuit.

No. of Terminals: 2

Simplified two-terminal setup for straightforward connection in circuits.

Package Style (Meter): SMALL OUTLINE

Small outline package style ensures compatibility with various circuit layouts.

Maximum DC Off-state Voltage: 320 V

Effective protection against high voltage spikes, safeguarding connected devices.

Maximum Operating Temperature: 150 °C

Wide operating temperature range ensures reliable performance in different environments.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

Thyristor technology provides fast response times to protect against surges effectively.

Minimum Operating Temperature: -40 °C

Operates efficiently even at low temperatures, making it suitable for various applications.

Terminal Position: DUAL

Dual terminal position allows for flexible installation options in circuits.

Maximum Holding Current: 600 mA

High holding current capacity ensures continuous protection against surge events.

Maximum Breakdown Voltage: 395 V

High breakdown voltage rating provides reliable protection against voltage spikes.

Reference Standard: UL RECOGNIZED

UL recognition ensures compliance with safety standards for reliable surge protection.

Technical Specifications

Silicon Surge Protectors TISP4395M3BJR attributes and parameters. Explore more Silicon Surge Protectors devices from Texas Instruments

Specs

Maximum Breakdown Voltage:

395 V

Configuration:

Maximum DC Off-state Voltage:

320 V

Maximum Holding Current:

600 mA

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

Non Repetitive Peak On-state Current:

32 A

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Silicon Surge Protectors

Surface Mount:

YES

Terminal Form:

C BEND

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TISP4395M3BJR Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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