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TISP3150F3DR

Texas Instruments

TISP3150F3DR by Texas Instruments

TISP3150F3DR by Texas Instruments is a Silicon Surge Protector with 4A Non Repetitive Peak On-state Current, 120V Max DC Off-state Voltage, and 150V Max Breakdown Voltage. It is used for surge protection in various applications like telecommunications equipment and industrial controls due to its THYRISTOR SURGE PROTECTOR configuration.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

ComSIT Distribution GmbH

Germany . 15,378 parts In-Stock

1+ parts

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15,378

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Vyrian

USA . 3,571 parts In-Stock

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3,571

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Digiode

USA . 2,864 parts In-Stock

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2,864

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,347 parts In-Stock

1+ parts

$2.708

100+ parts

-

1k+ parts

$3.191

10k+ parts

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2,347

$2.708

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$3.191

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ChromeModa Solutions

Germany . 6,996 parts In-Stock

1+ parts

$3.043

100+ parts

$2.495

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6,996

$3.043

$2.495

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IDEA Electronic Components Group

UK . 254 parts In-Stock

1+ parts

$3.043

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$2.739

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254

$3.043

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$2.739

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One Stop Electronics

USA . 1,239 parts In-Stock

1+ parts

$6.100

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1,239

$6.100

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AZTECH Wire

Italy . 367 parts In-Stock

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$11.198

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367

$11.198

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Component Stockers USA

USA . 253 parts In-Stock

1+ parts

$99.990

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253

$99.990

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DigiPath Technology Company

USA . 2,118 parts In-Stock

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$2.744

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2,118

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$2.744

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Corphita

USA . 601 parts In-Stock

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601

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Overview

Safeguard your electronics with the TISP3150F3DR by Texas Instruments, a top-of-the-line Silicon Surge Protector that offers unparalleled protection against power surges. Manufactured by industry leader Texas Instruments, this high-quality product features a series-connected configuration with 2 elements for maximum efficiency. Ideal for a wide range of applications, this device is designed to provide peace of mind and ensure the longevity of your valuable equipment. Trust Texas Instruments for superior quality and reliability, and invest in the TISP3150F3DR for ultimate protection and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material offers durability and protection for the surge protector, ensuring a longer lifespan.

Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

The series connected configuration with center tap and 2 elements allows for efficient surge protection and better performance.

Non Repetitive Peak On-state Current: 4 A

With a non repetitive peak on-state current of 4A, this surge protector can handle high current surges effectively, providing reliable protection for connected devices.

Surface Mount: YES

Being surface mountable makes installation of this surge protector easy and convenient, suitable for various electronic applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient placement on circuit boards, optimizing space and ensuring a neat layout.

No. of Elements: 2

Having 2 elements increases the effectiveness of surge protection, offering better security for connected devices.

Maximum DC Off-state Voltage: 120 V

The maximum DC off-state voltage of 120V ensures that connected devices are protected from high voltage surges, providing peace of mind for users.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

Utilizing a thyristor surge protector as the trigger device ensures quick response to surges, offering immediate protection for connected equipment.

Maximum Breakdown Voltage: 150 V

With a maximum breakdown voltage of 150V, this surge protector can effectively suppress surges above this threshold, safeguarding electronics from damage.

Reference Standard: UL RECOGNIZED

Being UL Recognized indicates that this surge protector meets high safety and performance standards, making it a trustworthy choice for surge protection needs.

Technical Specifications

Silicon Surge Protectors TISP3150F3DR attributes and parameters. Explore more Silicon Surge Protectors devices from Texas Instruments

Specs

Maximum Breakdown Voltage:

150 V

Maximum DC Off-state Voltage:

120 V

JESD-30 Code:

R-PDSO-G8

Non Repetitive Peak On-state Current:

4 A

No. of Elements:

2

No. of Terminals:

8

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TISP3150F3DR Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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