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NOIP2SE1300A-QTI

Onsemi

NOIP2SE1300A-QTI by Onsemi

NOIP2SE1300A-QTI by Onsemi is an image sensor with 1280x1024 resolution, 4.80x4.80 um pixel size, and 360 MHz master clock. It operates b/w -40 to 85 °C and has a dynamic range of 60 dB. Ideal for applications requiring high-speed digital imaging with a frame rate of 210 fps.

Median Price

$105.800

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 45 parts In-Stock

1+ parts

$115.340

100+ parts

$97.405

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-

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45

$115.340

$97.405

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Mouser Electronics

USA . 64 parts In-Stock

1+ parts

-

100+ parts

$96.260

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-

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64

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$96.260

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,973 parts In-Stock

1+ parts

$109.573

100+ parts

-

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1,973

$109.573

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Vyrian

USA . 9,675 parts In-Stock

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9,675

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NAC Semi

USA . 128 parts In-Stock

1+ parts

-

100+ parts

$145.330

1k+ parts

$134.150

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128

-

$145.330

$134.150

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IBS Electronics

USA . 64 parts In-Stock

1+ parts

-

100+ parts

$126.786

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-

10k+ parts

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64

-

$126.786

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 588 parts In-Stock

1+ parts

$103.806

100+ parts

-

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588

$103.806

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Corohmni

South Africa . 417 parts In-Stock

1+ parts

$104.790

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417

$104.790

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TANS Electronics

Latvia . 7,402 parts In-Stock

1+ parts

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7,402

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SupplyDigital Components

Austria . 6,103 parts In-Stock

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6,103

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Kulean Microsystems

USA . 4,511 parts In-Stock

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4,511

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Problanco Electronics

Mexico . 615 parts In-Stock

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615

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UHIMA Technologies

Türkiye . 579 parts In-Stock

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579

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Overview

Experience high-quality imaging like never before with the NOIP2SE1300A-QTI image sensor by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch performance and reliability in all their products, making this image sensor a must-have for applications requiring exceptional clarity and precision. From surveillance cameras to medical imaging devices, this sensor delivers unmatched value, benefits, and advantages to customers seeking cutting-edge technology for their projects. Elevate your imaging experience with Onsemi's NOIP2SE1300A-QTI image sensor today.

Feature Benefit Bullets

Pixel Size (um): 4.80X4.80

Fine pixel size for high resolution images

Maximum Supply Voltage: 1.9 V

Efficient power consumption

Master Clock: 360 MHz

Fast data processing

Body Width: 14.22 inch

Compact size for easy integration

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS technology for high-quality imaging

Package Shape or Style: SQUARE

Space-saving design

Minimum Supply Voltage: 1.7 V

Flexible power options

Maximum Operating Temperature: 85 °C

Suitable for various environmental conditions

Horizontal Pixel: 1280

High-resolution horizontal imaging

Output Type: DIGITAL VOLTAGE

Digital output for easy data transmission

Minimum Operating Temperature: -40 °C

Operates even in extreme cold conditions

Dynamic Range: 60 dB

Captures a wide range of light levels

Vertical Pixel: 1024

High-resolution vertical imaging

Body Length/Diameter: 14.22 mm

Compact form factor

Spectral Response (nm): 400-1000

Captures a wide range of wavelengths

Optical Format (inch): 1/2

Standard optical format

Data Rate: 72 Mbps

Fast data transfer rate

Termination Type: SOLDER

Secure connection for reliability

Output Interface Type: 4-WIRE INTERFACE

Versatile output interface

Frame Rate: 210 fps

High frame rate for smooth video capture

Array Type: FRAME

Organized array for efficient image capture

Mounting Feature: SURFACE MOUNT

Easy mounting on various surfaces

Technical Specifications

Image Sensors NOIP2SE1300A-QTI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO OPERATES AT 3.2 TO 3.4 V SUPPLY VOLTAGE, GLOBAL SHUTTER

Array Type:

FRAME

Body Width:

14.22 inch

Body Height:

2.28 mm

Body Length/Diameter:

14.22 mm

Data Rate:

72 Mbps

Dynamic Range:

60 dB

Frame Rate:

210 fps

Horizontal Pixel:

1280

Master Clock:

360 MHz

Mounting Feature:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/2

Output Interface Type:

4-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

4.80X4.80

Sensors or Transducers Type:

Spectral Response (nm):

400-1000

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

1024

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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