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NOIP1SP0480A-STI1

Onsemi

NOIP1SP0480A-STI1 by Onsemi

NOIP1SP0480A-STI1 by Onsemi is an image sensor with 4.80x4.80 um pixel size, 68 MHz master clock, and 808 (H) x 608 (V) resolution. It operates b/w -40 to 85 °C and has a dynamic range of 59 dB. Ideal for applications requiring high-speed imaging in compact devices.

Median Price

$26.685

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 99 parts In-Stock

1+ parts

$31.870

100+ parts

$22.631

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$21.838

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99

$31.870

$22.631

$21.838

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Verical

USA . 140 parts In-Stock

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Mouser Electronics

USA . 70 parts In-Stock

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$21.500

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$21.100

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70

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$21.500

$21.100

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Distributors (In-Stock)

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Digiode

USA . 1,952 parts In-Stock

1+ parts

$31.597

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1,952

$31.597

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Vyrian

USA . 2,477 parts In-Stock

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Flip Electronics

USA . 140 parts In-Stock

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140

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Distributors (Availability)

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Corphita

USA . 588 parts In-Stock

1+ parts

$29.934

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588

$29.934

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Corohmni

South Africa . 339 parts In-Stock

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$33.260

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339

$33.260

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Kulean Microsystems

USA . 8,144 parts In-Stock

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TANS Electronics

Latvia . 3,265 parts In-Stock

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SupplyDigital Components

Austria . 1,579 parts In-Stock

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Problanco Electronics

Mexico . 842 parts In-Stock

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842

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UHIMA Technologies

Türkiye . 718 parts In-Stock

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718

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Overview

Capture every moment with exceptional clarity and precision using the NOIP1SP0480A-STI1 image sensor by Onsemi. Known for their top-quality manufacturing, Onsemi delivers cutting-edge technology in the field of image sensors, making them a trusted industry leader. Ideal for a wide range of applications, this sensor offers unmatched performance and reliability, ensuring that your images are crystal clear every time. Elevate your projects with the value and benefits that only Onsemi can provide, and experience the advantages of superior image quality like never before.

Feature Benefit Bullets

Pixel Size (um) 4.80X4.80

Smaller pixel size allows for higher resolution images to be captured, making this image sensor a good choice for applications requiring detailed images.

Maximum Supply Voltage 1.9 V

Low maximum supply voltage helps in reducing power consumption, making this image sensor energy efficient.

Master Clock 68 MHz

High master clock frequency enables fast data capture and processing, suitable for applications requiring real-time image processing.

Body Width 4.93 inch

Compact body width allows for easy integration into various devices without taking up much space.

Sensors or Transducers Type IMAGE SENSOR,CMOS

CMOS sensors are known for their low power consumption and high sensitivity, making them suitable for a wide range of imaging applications.

Package Shape or Style RECTANGULAR

Rectangular package shape allows for easy mounting and positioning within a device or system.

Minimum Supply Voltage 1.7 V

Low minimum supply voltage ensures operation even in low power scenarios, making this image sensor reliable in various conditions.

Maximum Operating Temperature 85 °C

High maximum operating temperature range allows for operation in harsh environments, increasing the versatility of this image sensor.

Horizontal Pixel 808

High horizontal pixel count results in detailed and sharp images, making this image sensor ideal for applications requiring high image quality.

Minimum Operating Temperature -40 °C

Low minimum operating temperature range ensures reliable operation even in cold conditions, making this image sensor suitable for outdoor and industrial applications.

Terminal Finish TIN SILVER COPPER

Durable terminal finish ensures reliable connectivity and longevity of the image sensor.

Maximum Operating Current 59 mA

Low maximum operating current helps in reducing power consumption and heat generation, making this image sensor energy efficient.

Dynamic Range 59 dB

High dynamic range allows the image sensor to capture a wide range of light levels accurately, ensuring high-quality images in various lighting conditions.

Vertical Pixel 608

High vertical pixel count contributes to the overall image resolution and quality, making this image sensor suitable for detailed imaging applications.

Body Length/Diameter 6.13 mm

Compact body length/diameter allows for easy integration into devices with limited space, without compromising on performance.

Optical Format (inch) 1/3.6

The optical format is compatible with a wide range of lenses, offering flexibility in capturing various types of images with this sensor.

Data Rate 68 Mbps

High data rate enables fast transfer of image data, making this image sensor suitable for applications requiring real-time image processing or high-speed imaging.

Termination Type SOLDER

Solder termination ensures secure and reliable connections, making this image sensor ideal for applications where vibration or movement is present.

Output Interface Type 4-WIRE INTERFACE

4-wire interface allows for easy connectivity with other devices, enabling seamless integration into complex systems.

Frame Rate 120 fps

High frame rate allows for capturing fast-moving objects or scenes with sharpness and clarity, making this image sensor suitable for high-speed imaging applications.

Array Type FULL FRAME

Full-frame array provides maximum image coverage, ensuring no details are missed in the captured images.

Mounting Feature SURFACE MOUNT

Surface mount feature simplifies the mounting process and enables easy assembly into devices or systems, making this image sensor convenient to use.

Technical Specifications

Image Sensors NOIP1SP0480A-STI1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT 3.3V NOMINAL SUPPLY VOLTAGE; IT ALSO HAVE MASTER CLOCK 340 MHZ (10-BIT) AND 272 MHZ (8-BIT) WHEN PLL IS NOT USED

Array Type:

FULL FRAME

Body Width:

4.93 inch

Body Height:

.75 mm

Body Length/Diameter:

6.13 mm

Data Rate:

68 Mbps

Dynamic Range:

59 dB

Frame Rate:

120 fps

Horizontal Pixel:

808

JESD-609 Code:

e1

Master Clock:

68 MHz

Mounting Feature:

Maximum Operating Current:

59 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/3.6

Output Interface Type:

4-WIRE INTERFACE

Package Shape or Style:

Pixel Size (um):

4.80X4.80

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

TIN SILVER COPPER

Termination Type:

SOLDER

Vertical Pixel:

608

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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