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NLX1G58CMUTCG

Onsemi

NLX1G58CMUTCG by Onsemi

NLX1G58CMUTCG by Onsemi is a CMOS Schmitt Trigger IC with 6.3ns propagation delay at 5V, suitable for military applications. It operates b/w -55°C to 125°C, has a load capacitance of 50pF, and can handle a max I (ol) of 24A. This surface-mount device features a small outline package with very thin profile and dual terminals.

Median Price

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1k+

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Vyrian

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Nova Conductors

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AZTECH Wire

Italy . 651 parts In-Stock

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Aztec Data Supply Inc.

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Ampacity Inc.

Singapore . 1,211 parts In-Stock

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Semicontronic

India . 290 parts In-Stock

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TANS Electronics

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Overview

Discover the cutting-edge NLX1G58CMUTCG by Onsemi, a top-quality Other Function Logic IC designed for high-performance applications. With a focus on reliability and innovation, Onsemi delivers products that exceed industry standards. This versatile IC offers low propagation delay, high power efficiency, and compact design, making it ideal for a wide range of electronics projects. Experience seamless integration and superior functionality with the NLX1G58CMUTCG, setting new standards in performance and value for customers seeking top-notch electronic components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer product lifespan.

Propagation Delay At Nominal Supply: 6.3 ns

Fast propagation delay allows for quick processing of signals, making this product suitable for high-speed applications.

Surface Mount: YES

Enables easy and secure mounting on PCBs, saving space and facilitating automated assembly processes.

Nominal Supply Voltage / Vsup (V): 5

Compatible with standard 5V power supplies, ensuring easy integration into existing systems.

Load Capacitance (CL): 50 pF

Capable of driving moderate loads, making it versatile for various circuit requirements.

Power Supplies (V): 3.3

Can operate at lower power supply voltages, offering flexibility in power management.

No. of Terminals: 6

Simplifies connectivity and interface with external components, enhancing usability.

Package Style (Meter): SMALL OUTLINE, VERY THIN PROFILE

Compact form factor saves space on PCBs and allows for denser circuit designs.

Maximum I (ol): 24 Amp

High output current capability enables driving of larger loads, expanding the range of applications.

Maximum Operating Temperature: 125 °C

Wide operating temperature range ensures reliable performance even in harsh environmental conditions.

Minimum Operating Temperature: -55 °C

Operates effectively in low-temperature environments, suitable for diverse applications.

Terminal Finish: NICKEL GOLD PALLADIUM

Corrosion-resistant finish on terminals for reliability and extended product life.

Width: 1 mm

Narrow width allows for efficient use of space on PCBs and compact electronic designs.

Minimum Supply Voltage (Vsup): 1.65 V

Supports operation at low supply voltages, suitable for energy-efficient applications.

Length: 1 mm

Compact length for space-saving installation and design constraints.

Temperature Grade: MILITARY

Meets stringent military standards for reliability and performance in demanding environments.

Schmitt Trigger: YES

Incorporation of Schmitt trigger function for noise immunity and signal conditioning.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high noise immunity.

Terminal Form: NO LEAD

Lead-free terminal form for compliance with environmental regulations and best practices.

Terminal Pitch: 0.35 mm

Close terminal pitch allows for compact terminal layout and efficient PCB design.

Maximum Supply Voltage (Vsup): 5.5 V

Operating within a safe margin of maximum supply voltage for reliability and longevity.

Technical Specifications

Other Function Logic ICs NLX1G58CMUTCG attributes and parameters. Explore more Other Function Logic ICs devices from Onsemi

Specs

Family:

1G

JESD-30 Code:

S-PDSO-N6

Length:

1 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,14

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Power Supplies (V):

3.3

Propagation Delay At Nominal Supply:

6.3 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

.55 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL GOLD PALLADIUM

Terminal Form:

Terminal Pitch:

.35 mm

Terminal Position:

DUAL

Width:

1 mm

Trade Compliance

NLX1G58CMUTCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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