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NLX1G58AMUTCG

Onsemi

NLX1G58AMUTCG by Onsemi

NLX1G58AMUTCG by Onsemi is a CMOS Schmitt Trigger IC with 6.3ns propagation delay at 5V, suitable for military applications. It operates b/w -55 to 125 °C and has a load capacitance of 50pF, making it ideal for fast response logic circuits in harsh environments. The small outline package with dual terminals and nickel palladium gold finish ensures reliable performance in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,630 parts In-Stock

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Vyrian

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SupplyDigital Components

Austria . 7,216 parts In-Stock

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Kulean Microsystems

USA . 5,815 parts In-Stock

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TANS Electronics

Latvia . 3,100 parts In-Stock

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Problanco Electronics

Mexico . 1,729 parts In-Stock

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Corphita

USA . 1,049 parts In-Stock

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UHIMA Technologies

Türkiye . 698 parts In-Stock

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Corohmni

South Africa . 425 parts In-Stock

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Overview

Discover endless possibilities with the NLX1G58AMUTCG by Onsemi. This innovative product offers top-notch quality and reliability, backed by the reputable manufacturer, Onsemi. Ideal for a variety of applications in the Other Function Logic ICs category, this product provides unmatched value and benefits to customers. Experience fast propagation delay, low power consumption, and ease of installation with this versatile solution. Elevate your projects with the NLX1G58AMUTCG and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring reliability in various environments.

Propagation Delay At Nominal Supply: 6.3 ns

Low propagation delay allows for fast signal processing, making this product suitable for applications requiring quick response times.

Surface Mount: YES

Facilitates easy installation and integration into circuit boards, saving time and effort during assembly.

Nominal Supply Voltage / Vsup (V): 5

Operates efficiently at a standard supply voltage, ensuring compatibility with commonly used power sources.

Load Capacitance (CL): 50 pF

Suitable for driving and controlling external loads while maintaining signal integrity.

Power Supplies (V): 3.3

Provides flexibility in power options, allowing for compatibility with various systems and applications.

No. of Terminals: 6

Offers sufficient connectivity options for interfacing with other components in a circuit.

Maximum I (ol): 24 Amp

High output current capability enables driving of larger loads without external amplification.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for use in demanding industrial or automotive environments.

Minimum Operating Temperature: -55 °C

Designed to function reliably even in extremely cold conditions, ensuring consistent performance in various climates.

Terminal Finish: NICKEL PALLADIUM GOLD

Provides corrosion resistance and enhances conductivity for stable electrical connections.

Temperature Grade: MILITARY

Meets stringent military standards for reliability and performance, making it ideal for mission-critical applications.

Schmitt Trigger: YES

Incorporates Schmitt trigger functionality for signal conditioning and noise immunity, ensuring accurate signal processing.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high noise immunity, optimizing energy efficiency in the circuit.

Technical Specifications

Other Function Logic ICs NLX1G58AMUTCG attributes and parameters. Explore more Other Function Logic ICs devices from Onsemi

Specs

Family:

1G

JESD-30 Code:

R-PDSO-N6

JESD-609 Code:

e4

Length:

1.45 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Power Supplies (V):

3.3

Propagation Delay At Nominal Supply:

6.3 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

.55 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

1 mm

Trade Compliance

NLX1G58AMUTCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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