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NLX1G57AMUTCG

Onsemi

NLX1G57AMUTCG by Onsemi

NLX1G57AMUTCG by Onsemi is a CMOS Schmitt Trigger IC with 14.4ns propagation delay, 30pF load capacitance, and 8A max I (ol). It operates at temperatures from -55 to 125 °C and is suitable for military-grade applications requiring fast signal processing in compact spaces.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,316 parts In-Stock

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Vyrian

USA . 869 parts In-Stock

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TANS Electronics

Latvia . 8,124 parts In-Stock

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Problanco Electronics

Mexico . 6,815 parts In-Stock

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Corphita

USA . 2,423 parts In-Stock

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Kulean Microsystems

USA . 2,355 parts In-Stock

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SupplyDigital Components

Austria . 1,885 parts In-Stock

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Corohmni

South Africa . 313 parts In-Stock

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UHIMA Technologies

Türkiye . 73 parts In-Stock

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Overview

Unleash the power of innovation with the NLX1G57AMUTCG by Onsemi. Crafted with precision and expertise, this cutting-edge product exemplifies the quality that Onsemi is renowned for. With a plethora of applications in various industries, this logic IC offers unparalleled value and benefits to customers. From its fast propagation delay to its wide operating temperature range, this product ensures optimal performance and reliability. Stay ahead of the curve and elevate your projects with the NLX1G57AMUTCG by Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material offers durability and resistance to environmental factors, making the product long-lasting and reliable.

Propagation Delay At Nominal Supply: 14.4 ns

Low propagation delay ensures fast signal processing and high efficiency in circuit operations.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on circuit boards, saving time and effort in assembly.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage ensures compatibility with common power sources in electronic devices.

Load Capacitance (CL): 30 pF

Designed to handle a load capacitance of 30 pF, ensuring stability and performance in various circuit configurations.

Power Supplies (V): 1.8/5

Supports multiple power supply options (1.8V and 5V), offering flexibility in circuit design and compatibility with different systems.

No. of Terminals: 6

With 6 terminals, this IC provides versatile connectivity options for interfacing with other components in the circuit.

Package Style (Meter): SMALL OUTLINE, VERY THIN PROFILE

The small outline and thin profile package design allow for efficient use of space on the circuit board, particularly important in compact electronic devices.

Maximum I (ol): 8 Amp

Capable of handling a maximum output current of 8 Amp, providing ample power for driving various loads in the circuit.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125 °C, this IC can withstand elevated heat levels in demanding applications without compromising performance.

Minimum Operating Temperature: -55 °C

The ability to operate at a minimum temperature of -55 °C ensures reliable functionality even in cold environments or during temperature fluctuations.

Terminal Position: DUAL

Dual terminal positions offer flexibility in circuit connections, accommodating different wiring configurations and simplifying installation.

Maximum Seated Height: 0.55 mm

With a maximum seated height of 0.55 mm, this IC is suitable for applications with space constraints, allowing for a low-profile design.

Width: 1 mm

Compact width of 1 mm enables the IC to fit into tight spaces on the circuit board, enhancing overall design flexibility.

Minimum Supply Voltage (Vsup): 1.65 V

Supports a minimum supply voltage of 1.65 V, ensuring compatibility with low-power applications and energy-efficient operation.

Length: 1.45 mm

The length of 1.45 mm allows for a compact form factor, suitable for small electronic devices or densely packed circuit boards.

Temperature Grade: MILITARY

Military-grade temperature rating signifies high reliability and robust performance in harsh environmental conditions or critical applications.

Schmitt Trigger: YES

Inclusion of a Schmitt trigger enhances noise immunity and signal integrity, improving the overall performance and stability of the circuit.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and fast switching speeds, making it suitable for various digital applications.

Terminal Form: NO LEAD

Lead-free terminal form complies with environmental regulations and RoHS standards, ensuring eco-friendly manufacturing and use.

Packing Method: TR

TR packaging method (Tape and Reel) facilitates automated pick-and-place assembly processes, improving efficiency and reducing production costs.

Terminal Pitch: 0.5 mm

With a small terminal pitch of 0.5 mm, this IC supports high-density mounting on the circuit board, enabling compact designs and space-saving layouts.

Maximum Supply Voltage (Vsup): 5.5 V

The maximum supply voltage of 5.5 V allows for a safe operating range, providing a margin of safety against voltage fluctuations and ensuring reliable performance.

Technical Specifications

Other Function Logic ICs NLX1G57AMUTCG attributes and parameters. Explore more Other Function Logic ICs devices from Onsemi

Specs

Family:

1G

JESD-30 Code:

R-PDSO-N6

Length:

1.45 mm

Load Capacitance (CL):

30 pF

Logic IC Type:

Maximum I (ol):

8 Amp

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Power Supplies (V):

1.8/5

Propagation Delay At Nominal Supply:

14.4 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

.55 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

1 mm

Trade Compliance

NLX1G57AMUTCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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