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NLX1G57MUTCG

Onsemi

NLX1G57MUTCG by Onsemi

NLX1G57MUTCG by Onsemi is a CMOS Schmitt Trigger IC with 14.4ns propagation delay, 30pF load capacitance, and 8A max I (ol). It operates at -55 to 125 °C and has a MILITARY temperature grade. Ideal for applications requiring fast signal processing in compact spaces.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,141 parts In-Stock

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Vyrian

USA . 1,767 parts In-Stock

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TANS Electronics

Latvia . 7,997 parts In-Stock

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Kulean Microsystems

USA . 6,456 parts In-Stock

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Problanco Electronics

Mexico . 5,195 parts In-Stock

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SupplyDigital Components

Austria . 3,196 parts In-Stock

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Corphita

USA . 1,825 parts In-Stock

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UHIMA Technologies

Türkiye . 567 parts In-Stock

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Corohmni

South Africa . 431 parts In-Stock

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Overview

Unlock the potential of your electronic projects with the NLX1G57MUTCG by Onsemi. Manufactured by a trusted industry leader, this versatile logic IC offers unmatched quality and reliability. Ideal for a range of applications, this product provides fast propagation delay, low power consumption, and high current output. Say goodbye to technical headaches and hello to seamless performance with the NLX1G57MUTCG. Elevate your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the IC, making it suitable for a wide range of environmental conditions.

Propagation Delay At Nominal Supply: 14.4 ns

Low propagation delay ensures fast response time and efficient operation of the logic IC.

Surface Mount: YES

Surface mount capability allows for easy installation and space-saving design in electronic circuits.

Nominal Supply Voltage / Vsup (V): 5

The 5V nominal supply voltage is common in many electronic systems, making this IC compatible with a wide range of applications.

Load Capacitance (CL): 30 pF

The low load capacitance of 30 pF helps in reducing power consumption and improving the overall efficiency of the IC.

Power Supplies (V): 1.8/5

Support for multiple power supply voltages (1.8V and 5V) allows flexibility in different system configurations.

Maximum I (ol): 8 Amp

High output current capacity of 8 Amp enables driving of external loads without the need for additional buffer circuits.

Maximum Operating Temperature: 125 °C

Wide operating temperature range up to 125 °C ensures reliable performance in harsh environments.

Minimum Operating Temperature: -55 °C

The ability to operate at temperatures as low as -55 °C makes this IC suitable for use in extreme cold conditions.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and fast switching speeds, making this IC energy-efficient and reliable.

Technical Specifications

Other Function Logic ICs NLX1G57MUTCG attributes and parameters. Explore more Other Function Logic ICs devices from Onsemi

Specs

Family:

1G

JESD-30 Code:

R-PDSO-N6

Length:

1.2 mm

Load Capacitance (CL):

30 pF

Logic IC Type:

Maximum I (ol):

8 Amp

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,16

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Power Supplies (V):

1.8/5

Propagation Delay At Nominal Supply:

14.4 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

.55 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.4 mm

Terminal Position:

DUAL

Width:

1 mm

Trade Compliance

NLX1G57MUTCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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