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SN74AUP1G99DCURE4

Texas Instruments

SN74AUP1G99DCURE4 by Texas Instruments

SN74AUP1G99DCURE4 by Texas Instruments is a CMOS logic IC with 36.1ns propagation delay, 30pF load capacitance, and 1.7A max I (ol). It is used in industrial applications, operates at temperatures from -40 to 85°C, and supports a supply voltage range of 0.8V to 3.6V.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,230 parts In-Stock

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Digiode

USA . 968 parts In-Stock

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968

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Distributors (Availability)

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Parana Technologies

USA . 2,219 parts In-Stock

1+ parts

$8.897

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$9.574

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2,219

$8.897

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$9.574

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ChromeModa Solutions

Germany . 2,620 parts In-Stock

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$9.997

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$8.198

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IDEA Electronic Components Group

UK . 1,410 parts In-Stock

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$9.997

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$9.497

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$8.997

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1,410

$9.997

$9.497

$8.997

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AZTECH Wire

Italy . 857 parts In-Stock

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$15.340

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857

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One Stop Electronics

USA . 134 parts In-Stock

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$42.000

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134

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Component Stockers USA

USA . 771 parts In-Stock

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$99.990

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771

$99.990

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Corphita

USA . 3,219 parts In-Stock

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Microchip USA

USA . 460 parts In-Stock

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DigiPath Technology Company

USA . 275 parts In-Stock

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$9.013

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Overview

Elevate your electronic projects with the SN74AUP1G99DCURE4 from Texas Instruments, a leading manufacturer in the industry. This versatile logic IC boasts high-quality performance and reliability, making it ideal for a wide range of applications. With a compact design and low power consumption, this product offers exceptional value and efficiency to customers looking to streamline their projects. Upgrade your circuits today with the SN74AUP1G99DCURE4 and experience the difference that Texas Instruments can make in your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection to the internal components of the IC, making it suitable for various environmental conditions.

Propagation Delay At Nominal Supply: 36.1 ns

The low propagation delay ensures fast signal processing, making this IC efficient for time-critical applications.

Surface Mount: YES

Being surface mountable enables easy and efficient PCB assembly, saving time and labor costs during production.

Nominal Supply Voltage / Vsup (V): 1.1

Operating at a nominal supply voltage of 1.1V makes this IC energy-efficient and suitable for low-power applications.

Load Capacitance (CL): 30 pF

The specified load capacitance ensures stable and reliable performance of the IC in various circuit configurations.

Power Supplies (V): 1.2/3.3

Supporting multiple power supply options allows flexibility in system design and integration with different voltage levels.

No. of Terminals: 8

Having 8 terminals provides sufficient connectivity options for interfacing with other components in the circuit.

Maximum I (ol): 1.7 Amp

The high maximum output current capability allows driving of external loads with ease, expanding the range of applications for this IC.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this IC can withstand elevated environmental temperatures, ensuring reliable operation in harsh conditions.

Output Characteristics: 3-STATE

The 3-state output characteristics provide additional flexibility in controlling the output signal states, making the IC versatile for various logic applications.

Technical Specifications

Other Function Logic ICs SN74AUP1G99DCURE4 attributes and parameters. Explore more Other Function Logic ICs devices from Texas Instruments

Specs

Family:

AUP/ULP/V

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

2.3 mm

Load Capacitance (CL):

30 pF

Logic IC Type:

Maximum I (ol):

1.7 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.12,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.2/3.3

Propagation Delay At Nominal Supply:

36.1 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

.9 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

.8 V

Nominal Supply Voltage / Vsup (V):

1.1

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

2 mm

Trade Compliance

SN74AUP1G99DCURE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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