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NLV18VHC1GT125DFT2G

Onsemi

NLV18VHC1GT125DFT2G by Onsemi

NLV18VHC1GT125DFT2G by Onsemi is a 5-terminal logic gate with 13.5ns propagation delay at 5V, suitable for military applications. It features a max I (ol) of 8A, operates b/w -55 to 125 °C, and has a small outline package style.

Median Price

$0.082

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 138,000 parts In-Stock

1+ parts

-

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$0.085

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$0.070

10k+ parts

$0.063

138,000

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$0.085

$0.070

$0.063

Verical

USA . 120,000 parts In-Stock

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$0.079

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$0.079

Distributors (In-Stock)

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Digiode

USA . 1,329 parts In-Stock

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$0.069

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1,329

$0.069

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Flip Electronics

USA . 111,000 parts In-Stock

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Vyrian

USA . 8,430 parts In-Stock

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Corphita

USA . 1,138 parts In-Stock

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$0.066

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1,138

$0.066

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Corohmni

South Africa . 233 parts In-Stock

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$0.073

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233

$0.073

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AZTECH Wire

Italy . 575 parts In-Stock

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$14.410

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575

$14.410

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SupplyDigital Components

Austria . 7,890 parts In-Stock

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Kulean Microsystems

USA . 6,678 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 5,912 parts In-Stock

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TANS Electronics

Latvia . 4,597 parts In-Stock

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Problanco Electronics

Mexico . 2,060 parts In-Stock

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UHIMA Technologies

Türkiye . 704 parts In-Stock

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Microchip USA

USA . 103 parts In-Stock

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Overview

Experience unparalleled performance and reliability with the NLV18VHC1GT125DFT2G by Onsemi. As a trusted leader in the industry, Onsemi provides top-quality logic gates for a wide range of applications. This product offers fast propagation delay, 3-state output characteristics, and a wide operating temperature range, making it ideal for military-grade projects. With its compact size and surface-mount design, the NLV18VHC1GT125DFT2G is easy to integrate into any circuit. Trust Onsemi for superior products that deliver exceptional value and performance every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package material provides durability and protection, ensuring the product can withstand various environmental conditions.

Propagation Delay At Nominal Supply: 13.5 ns

Low propagation delay allows for fast signal processing, making this logic gate suitable for high-speed applications.

Surface Mount: YES

Being surface mountable makes installation and PCB layout easier, saving space and enhancing overall design flexibility.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage makes integration with other digital systems seamless and convenient.

Output Characteristics: 3-STATE

The 3-state output feature allows the logic gate to have an additional 'high impedance' state, providing flexibility in data bus applications.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and compatibility with a wide range of systems, making this logic gate energy-efficient and versatile.

Technical Specifications

Logic Gates NLV18VHC1GT125DFT2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Propagation Delay At Nominal Supply:

13.5 ns

Propagation Delay (tpd):

20.5 ns

Schmitt Trigger:

NO

Screening Level:

AEC-Q100

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.25 mm

Trade Compliance

NLV18VHC1GT125DFT2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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