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NLV14011UBDR2G

Onsemi

NLV14011UBDR2G by Onsemi

NLV14011UBDR2G by Onsemi is a CMOS Logic Gate with 4 functions, 2 inputs, and 180ns propagation delay at 5V. Ideal for AEC-Q100 applications requiring fast response time and operating temperatures ranging from -55 to 125 °C. Package style is small outline with dual terminal position, suitable for surface mount assembly.

Median Price

$0.193

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 2,435 parts In-Stock

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$1.040

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$0.391

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$0.262

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$0.172

2,435

$1.040

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$0.172

Verical

USA . 233,099 parts In-Stock

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DigiKey

USA . 2,500 parts In-Stock

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$0.160

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$0.160

Flip Electronics (Authorized)

USA . 2,500 parts In-Stock

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Digiode

USA . 361 parts In-Stock

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Vyrian

USA . 897 parts In-Stock

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Flip Electronics

USA . 25,000 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 169,966 parts In-Stock

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$0.154

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Corphita

USA . 1,054 parts In-Stock

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Corohmni

South Africa . 64 parts In-Stock

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Vigor

Singapore . 341 parts In-Stock

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Continental Prestige Electronics

USA . 238,099 parts In-Stock

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Kepictronics

USA . 238,099 parts In-Stock

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SupplyDigital Components

Austria . 7,511 parts In-Stock

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Problanco Electronics

Mexico . 4,644 parts In-Stock

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Kulean Microsystems

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TANS Electronics

Latvia . 1,078 parts In-Stock

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UHIMA Technologies

Türkiye . 662 parts In-Stock

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Overview

Unlock the power of advanced logic gates with the NLV14011UBDR2G by Onsemi. With a commitment to quality and cutting-edge technology, Onsemi delivers a superior product that exceeds expectations. Ideal for a variety of applications, these logic gates offer unmatched performance and reliability. Experience seamless integration, fast propagation delays, and versatile functionality with this innovative solution. Trust Onsemi to provide you with the value, benefits, and advantages you need to take your projects to the next level. Elevate your designs with the NLV14011UBDR2G today.

Feature Benefit Bullets

Propagation Delay At Nominal Supply: 180 ns

Low propagation delay ensures fast response time for the logic gates, making them suitable for high-speed applications.

No. of Functions: 4

Having 4 functions in one package increases the efficiency and functionality of the logic gates, reducing space and component count in the circuit design.

Nominal Supply Voltage / Vsup (V): 5

Operating at a common voltage of 5V makes it compatible with standard logic levels and easily integrates into existing systems.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, these logic gates can withstand harsh environmental conditions and ensure reliable performance.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making these logic gates energy-efficient and reliable for various applications.

Technical Specifications

Logic Gates NLV14011UBDR2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

4000/14000/40000

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e3

Length:

8.65 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Moisture Sensitivity Level (MSL):

1

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

5/15

Propagation Delay At Nominal Supply:

180 ns

Propagation Delay (tpd):

180 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Screening Level:

AEC-Q100

Maximum Seated Height:

1.75 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Trade Compliance

NLV14011UBDR2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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