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SN74LVC3G17DCTRE4

Texas Instruments

SN74LVC3G17DCTRE4 by Texas Instruments

SN74LVC3G17DCTRE4 by Texas Instruments is a CMOS logic gate with 3 functions and a propagation delay of 5.4 ns at 1.8V, suitable for automotive applications. It operates within a temperature range of -40 to 125°C, has a load capacitance of 50 pF, and features Schmitt Trigger technology for noise immunity.

Median Price

$1.250

Lifecycle Status

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5

In-Stock Inventory

1k+

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Mouser Electronics

USA . 2,627 parts In-Stock

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$1.250

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$0.720

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$0.661

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$0.561

2,627

$1.250

$0.720

$0.661

$0.561

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Nova Conductors

Japan . 73 parts In-Stock

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$0.257

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Digiode

USA . 929 parts In-Stock

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$0.484

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Chip Stock

USA . 26,700 parts In-Stock

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Vyrian

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Continental Prestige Electronics

USA . 6,214 parts In-Stock

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$0.255

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$0.250

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Argo Parts USA

USA . 2,563 parts In-Stock

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$0.255

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$0.248

2,563

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Netroflash

USA . 100 parts In-Stock

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$0.257

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$0.251

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Corohmni

South Africa . 456 parts In-Stock

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$0.263

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456

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Modulus Dynamics

Lithuania . 42 parts In-Stock

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$0.284

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$0.281

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$0.272

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Ampacity Inc.

Singapore . 4,001 parts In-Stock

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Semicontronic

India . 2,644 parts In-Stock

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$0.433

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$0.422

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$0.420

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Corphita

USA . 3,091 parts In-Stock

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$0.459

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Parana Technologies

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$14.309

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$14.759

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DigiPath Technology Company

USA . 1,241 parts In-Stock

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$15.756

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ChromeModa Solutions

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$16.078

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$13.184

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IDEA Electronic Components Group

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$15.274

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$14.470

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Advanced Electronics

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$24.519

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$22.312

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$20.106

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Perfect Parts

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Microchip USA

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Robosynatics

Brazil . 950 parts In-Stock

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Lucentia Tech

USA . 950 parts In-Stock

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Ashlea Components Ltd (Excess)

UK . 10 parts In-Stock

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Overview

Elevate your electronic projects with the SN74LVC3G17DCTRE4 by Texas Instruments, a top-of-the-line logic gate that delivers unparalleled quality and reliability. With Texas Instruments' renowned reputation for excellence in manufacturing, this product guarantees superior performance and durability. Ideal for a wide range of applications, this logic gate offers fast propagation delay and low power consumption, making it a cost-effective solution for your design needs. Trust in Texas Instruments to provide innovative solutions that bring value and efficiency to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product durable and suitable for various applications.

Propagation Delay At Nominal Supply: 5.4 ns

With a low propagation delay at nominal supply, this logic gate ensures high-speed performance.

Surface Mount: YES

Being surface mountable, this product is easy to install and saves space on the PCB.

No. of Functions: 3

This logic gate offers multiple functions in a single device, providing versatility and efficiency.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy integration into circuit boards and efficient use of space.

Nominal Supply Voltage / Vsup (V): 1.8

The low nominal supply voltage makes this product energy-efficient and suitable for low-power applications.

Load Capacitance (CL): 50 pF

With a load capacitance of 50 pF, this logic gate can easily drive capacitive loads without sacrificing performance.

Power Supplies (V): 3.3

The compatibility with 3.3V power supplies makes this product widely usable in various electronic systems.

No. of Terminals: 8

With 8 terminals, this logic gate offers flexibility in connectivity and integration with other components.

Package Style (Meter): SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

The small outline, low profile, and shrink pitch package style ensures a compact design and efficient use of space.

Maximum I (ol): 32 Amp

The high maximum output current of 32 Amp allows this logic gate to drive heavy loads with ease.

Propagation Delay (tpd): 9.2 ns

The low propagation delay of 9.2 ns ensures quick response times for input signals.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this product is suitable for use in demanding environments.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows this logic gate to function effectively in extreme cold conditions.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

The use of nickel/palladium/gold terminal finish ensures reliable connections and corrosion resistance.

Terminal Position: DUAL

The dual terminal position allows for flexible mounting options and ease of installation.

Maximum Seated Height: 1.3 mm

The low maximum seated height enables this logic gate to fit in compact spaces and slim devices.

Width: 2.8 mm

The narrow width of 2.8 mm makes this product suitable for applications with limited space.

Minimum Supply Voltage (Vsup): 1.65 V

The low minimum supply voltage requirement enables this logic gate to operate efficiently even with low power sources.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures secure and reliable soldering during installation.

Length: 2.95 mm

The compact length of 2.95 mm allows for easy integration into tight spaces and small devices.

Temperature Grade: AUTOMOTIVE

With an automotive temperature grade, this logic gate is suitable for use in automotive electronics applications.

Schmitt Trigger: YES

The inclusion of a Schmitt trigger ensures stable and reliable operation in noisy environments.

Technology: CMOS

Utilizing CMOS technology, this logic gate offers high speed and low power consumption.

Terminal Form: GULL WING

The gull wing terminal form provides secure connections and ease of soldering during installation.

Packing Method: TR

The TR packing method offers protection during shipping and storage, ensuring the product arrives safely to the end user.

Terminal Pitch: 0.65 mm

With a terminal pitch of 0.65 mm, this logic gate allows for precise connections and compatibility with standard PCB layouts.

Maximum Supply Voltage (Vsup): 5.5 V

The high maximum supply voltage of 5.5 V provides flexibility in power source options for this logic gate.

Maximum Power Supply Current (ICC): 0.01 mA

With a low maximum power supply current of 0.01 mA, this logic gate is energy-efficient and suitable for battery-powered applications.

Technical Specifications

Logic Gates SN74LVC3G17DCTRE4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

2.95 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

32 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

3

No. of Inputs:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SSOP8,.16

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

5.4 ns

Propagation Delay (tpd):

9.2 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

1.3 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

2.8 mm

Trade Compliance

SN74LVC3G17DCTRE4 Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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